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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/8551
Title: Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition
Authors: Reddy P.
Washiyama S.
Mecouch W.
Hernandez-Balderrama L.H.
Kaess F.
Hayden Breckenridge M.
Sarkar, Biplab
Haidet B.B.
Franke A.
Kohn E.
Collazo R.
Sitar Z.
Published in: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Abstract: In this work, the authors characterized the interface of plasma enhanced chemical vapor deposition (PECVD) dielectrics, SiO2 and SiNx with AlGaN as a function of Al composition. SiO2 is found to exhibit type I straddled band alignment with positive conduction and valence band offsets for all Al compositions. However, the interface Fermi level is found to be pinned within the bandgap, indicating a significant density of interface states. Hence, SiO2 is found to be suitable for insulating layers or electrical isolation on AlGaN with breakdown fields between 4.5 and 6.5 MV cm-1, but an additional passivating interlayer between SiO2 and AlGaN is necessary for passivation on Al-rich AlGaN. In contrast, Si-rich PECVD SiNx is found to exhibit type II staggered band alignment with positive conduction band offsets and negative valence band offsets for Al compositions <40% and type I straddled band alignment with negative conduction and valence band offsets for Al compositions >40% and is, hence, found to be unsuitable for insulating layers or electrical isolation on Al-rich AlGaN in general. In contrast to passivating stoichiometric LPCVD Si3N4, no evidence for interface state reduction by depositing SiNx on AlGaN is observed. © 2018 Author(s).
Citation: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films (2018), 36(6): -
URI: https://doi.org/10.1116/1.5050501
http://repository.iitr.ac.in/handle/123456789/8551
Issue Date: 2018
Publisher: AVS Science and Technology Society
ISSN: 7342101
Author Scopus IDs: 57200218681
51261473800
6506406361
56372503000
56310683000
57189226125
57205868869
56024707600
35731256800
7102979682
6701729383
7004338257
Author Affiliations: Reddy, P., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, Inc., 2054 Kildaire Farm Rd, Cary, NC 27518, United States
Washiyama, S., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Mecouch, W., Adroit Materials, Inc., 2054 Kildaire Farm Rd, Cary, NC 27518, United States
Hernandez-Balderrama, L.H., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Kaess, F., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Hayden Breckenridge, M., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Sarkar, B., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Haidet, B.B., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Franke, A., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Kohn, E., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Collazo, R., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Sitar, Z., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States
Funding Details: The authors acknowledge funding in part from NSF (Grant Nos. ECCS-1508854, ECCS-1610992, DMR-1508191, and ECCS-1653383), ARO (Grant Nos. W911NF-15-2-0068,W911NF-14-C-0008, and W911NF-16-C-0101), (Grant No. FA9550-17-1-0225).
Appears in Collections:Journal Publications [ECE]

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