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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/8367
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dc.contributor.authorHashmi M.S.-
dc.contributor.authorGhannouchi F.M.-
dc.contributor.authorTasker P.J.-
dc.contributor.authorRawat, Karun-
dc.date.accessioned2020-10-09T05:08:09Z-
dc.date.available2020-10-09T05:08:09Z-
dc.date.issued2011-
dc.identifier.citationIEEE Microwave Magazine (2011), 12(4): 96-107-
dc.identifier.issn15273342-
dc.identifier.urihttps://doi.org/10.1109/MMM.2011.940595-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/8367-
dc.description.abstractFor the purpose of identifying the large-signal behavior of transistor devices, the use of linear S-parameter is often inadequate [1]. Large-signal characterization is essential for the estimation and determination of the device performance in the nonlinear domain, and the loadpull process [1][3] is one recommended approach for the characterization, optimization and design of transistor devices and radio-frequency (RF) power amplifiers (PAs). © 2011 IEEE.-
dc.language.isoen_US-
dc.relation.ispartofIEEE Microwave Magazine-
dc.titleHighly reflective load-pull-
dc.typeArticle-
dc.scopusid26430622900-
dc.scopusid7006217592-
dc.scopusid7006509261-
dc.scopusid57000644800-
dc.affiliationHashmi, M.S., IRadio Lab, Schulich School of Engineering, University of Calgary, AB, Canada-
dc.affiliationGhannouchi, F.M., IRadio Lab, Schulich School of Engineering, University of Calgary, AB, Canada, MTT Society, United States-
dc.affiliationTasker, P.J., Center for High Frequency Engineering, Cardiff University, United Kingdom-
dc.affiliationRawat, K., IRadio Lab, Schulich School of Engineering, University of Calgary, AB, Canada-
dc.description.correspondingauthorHashmi, M. S.; IRadio Lab, Schulich School of Engineering, University of Calgary, AB, Canada; email: mshashmi@ucalgary.ca-
Appears in Collections:Journal Publications [ECE]

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