http://repository.iitr.ac.in/handle/123456789/8363| Title: | High free carrier concentration in p-GaN grown on AlN substrates |
| Authors: | Sarkar, Biplab Mita S. Reddy P. Klump A. Kaess F. Tweedie J. Bryan I. Bryan Z. Kirste R. Kohn E. Collazo R. Sitar Z. |
| Published in: | Applied Physics Letters |
| Abstract: | A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 10 18 cm -3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60-80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 10 19 cm -3 ) can be achieved in p-GaN/AlN without the onset of self-compensation. © 2017 Author(s). |
| Citation: | Applied Physics Letters (2017), 111(3): - |
| URI: | https://doi.org/10.1063/1.4995239 http://repository.iitr.ac.in/handle/123456789/8363 |
| Issue Date: | 2017 |
| Publisher: | American Institute of Physics Inc. |
| ISSN: | 36951 |
| Author Scopus IDs: | 57205868869 8535369100 57200218681 55964838400 56310683000 23487136400 55507214900 55170770300 24450568300 7102979682 6701729383 7004338257 |
| Author Affiliations: | Sarkar, B., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Mita, S., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States Reddy, P., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States Klump, A., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Kaess, F., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Tweedie, J., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States Bryan, I., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Bryan, Z., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Kirste, R., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States Kohn, E., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Collazo, R., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Sitar, Z., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, 2054 Kildaire Farm Road, Cary, NC 27518, United States |
| Funding Details: | We sincerely thank the support from NSF (DMR-1312582, ECCS-1508854, ECCS-1610992, DMR-1508191) and ARO (W911NF-15-2-0068, W911NF-16-C-0101) for funding this work. |
| Appears in Collections: | Journal Publications [ECE] |
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