http://repository.iitr.ac.in/handle/123456789/8259| Title: | Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD |
| Authors: | Bryan I. Bryan Z. Washiyama S. Reddy P. Gaddy B. Sarkar, Biplab Breckenridge M.H. Guo Q. Bobea M. Tweedie J. Mita S. Irving D. Collazo R. Sitar Z. |
| Published in: | Applied Physics Letters |
| Abstract: | In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the "knee behavior" in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range. © 2018 Author(s). |
| Citation: | Applied Physics Letters (2018), 112(6): - |
| URI: | https://doi.org/10.1063/1.5011984 http://repository.iitr.ac.in/handle/123456789/8259 |
| Issue Date: | 2018 |
| Publisher: | American Institute of Physics Inc. |
| ISSN: | 36951 |
| Author Scopus IDs: | 55507214900 55170770300 51261473800 57200218681 51663439700 57205868869 57200504504 57200500288 55508387700 23487136400 8535369100 7006905380 6701729383 7004338257 |
| Author Affiliations: | Bryan, I., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Bryan, Z., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Washiyama, S., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Reddy, P., Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, NC 27518, United States Gaddy, B., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Sarkar, B., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Breckenridge, M.H., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Guo, Q., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Bobea, M., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Tweedie, J., Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, NC 27518, United States Mita, S., Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, NC 27518, United States Irving, D., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Collazo, R., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States Sitar, Z., Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7919, United States, Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, NC 27518, United States |
| Funding Details: | Partial financial support from NSF (ECCS-1508854, ECCS-1610992, DMR-1508191, and ECCS-1653383), ARO (W911NF-15-2-0068 and W911NF-16-C-0101), PNNL (NA-22-WMS-#66204) and AFOSR (FA9550-17-1-0225) is gratefully acknowledged. |
| Appears in Collections: | Journal Publications [ECE] |
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