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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/8249
Title: Development of thin broad band radar absorbing materials using nanostructured spinel ferrites
Authors: Smitha P.
Singh I.
Najim M.
Panwar R.
Singh, Dharmendra
Agarwala V.
Das Varma G.
Published in: Journal of Materials Science: Materials in Electronics
Abstract: Stealth applications now emphasise on development of efficient Radar Absorbing Materials of light weight, less coating thickness, broad bandwidth of absorption along with cost effective raw materials and manufacturing techniques. Therefore, in this paper an attempt has been made to develop such an efficient cost effective radar absorbing material which possesses broad band absorption with less coating thickness. Unconventionality of acquiring impedance match for a double layer absorber of nanostructured nickel ferrite (NF) with reasonably good dielectric properties and its cation substituted counterpart, nickel zinc ferrite (NZF) with enhanced magnetic properties has been thoroughly investigated for radar wave absorption for very low coating thickness. Complex permittivity and permeability of NF and NZF with crystallite sizes of 10.0 and 16.0 nm, respectively, are measured and used as the data bases. The microwave absorption properties of the ferrites are correlated with their size, morphology, permittivity, permeability, thickness and bandwidth of absorption. Multilayering has been performed using the optimization through Genetic Algorithm in order to attain suitable impedance matching layer for minimum reflection loss (RL) at lower thickness. The results indicate an enhancement in the absorption with RL value of ?45.0 dB for a moderately low coating thickness of 1.72 mm. Single layers NF, NZF and multilayer NF–NZF are fabricated over the aluminium sheets and the results are experimentally verified. © 2016, Springer Science+Business Media New York.
Citation: Journal of Materials Science: Materials in Electronics (2016), 27(8): 7731-7737
URI: https://doi.org/10.1007/s10854-016-4760-6
http://repository.iitr.ac.in/handle/123456789/8249
Issue Date: 2016
Publisher: Springer New York LLC
ISSN: 9574522
Author Scopus IDs: 18438006600
57209550886
49561789300
56377800100
36912015700
7005242439
57188830925
Author Affiliations: Smitha, P., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Singh, I., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Department of Physics, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Najim, M., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Panwar, R., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Singh, D., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Agarwala, V., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Das Varma, G., Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Department of Physics, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Corresponding Author: Smitha, P.; Department of Electronics and Communication Engineering, Indian Institute of Technology RoorkeeIndia; email: smitha.chelat@gmail.com
Appears in Collections:Journal Publications [ECE]

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