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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/8039
Title: A wideband two-stage doherty power amplifier at high back-off by exploring feasible design space
Authors: Ghosh S.
Rawat K.
Published in: International Journal of RF and Microwave Computer-Aided Engineering
Abstract: This article explores a design space for bandwidth enhancement of two-stage Doherty power amplifier for higher back-off based on same devices. This design space analysis shows that for any back-off level, a number of bandwidth enhancement solutions can be obtained with various combinations of design parameters for load combiner and load impedance. Therefore, the proposed scheme explores design space in terms of optimum design parameters for load combiner and load impedance for best bandwidth and realizability at a high back-off. The proposed design methodology is validated with a two-stage Doherty power amplifier using 25 W packaged Gallium Nitride High Electron Mobility Transistors. This Doherty power amplifier provides measured drain efficiency between 66% to 73.8% at saturation and 45% to 63.6% at 8-9 dB output power back-off from 1.7 to 2.025 GHz. Measurement with WCDMA signals shows that the adjacent channel power ratio is better than −46 dBc after applying digital predistortion. © 2018 Wiley Periodicals, Inc.
Citation: International Journal of RF and Microwave Computer-Aided Engineering (2018), 28(9): -
URI: https://doi.org/10.1002/mmce.21528
http://repository.iitr.ac.in/handle/123456789/8039
Issue Date: 2018
Publisher: John Wiley and Sons Inc.
Keywords: Broadband
Doherty power amplifier
High power
High-output power back-off
Load combiner
ISSN: 10964290
Author Scopus IDs: 57204465879
57000644800
Author Affiliations: Ghosh, S., Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttarakhand, India
Rawat, K., Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttarakhand, India
Corresponding Author: Ghosh, S.; Department of Electronics and Communication Engineering, Indian Institute of TechnologyIndia; email: sujata.ghosh@ieee.org
Appears in Collections:Journal Publications [ECE]

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