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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/7981
Title: A high efficiency inductor-less broadband fully integrated CMOS power amplifier
Authors: Bhattacharya R.
Basu A.
Rawat K.
Koul S.K.
Published in: International Journal of RF and Microwave Computer-Aided Engineering
Abstract: This work presents the design and implementation of a novel broadband completely inductor-less 300 MHz-2.4 GHz power amplifier (PA) in 180 nm CMOS, primarily for applications in the ultrahigh frequency (UHF) industrial scientific and medical band. This is capable of delivering up to 15.6 dBm saturated output power with an associated peak power added efficiency of 31% in measurement. Although amplifiers with higher output power have been reported, this amplifier occupies only 0.086 mm2 and does not require any off chip component for its operation, even at the UHF band. It also achieves the highest power density among a similar class of PA's below 10 GHz. © 2014 Wiley Periodicals, Inc.
Citation: International Journal of RF and Microwave Computer-Aided Engineering (2015), 25(4): 311-320
URI: https://doi.org/10.1002/mmce.20864
http://repository.iitr.ac.in/handle/123456789/7981
Issue Date: 2015
Publisher: John Wiley and Sons Inc.
Keywords: broadband
CMOS power amplifier
frequency tuning
inductor-less
pull
push
resistive feedback
ISSN: 10964290
Author Scopus IDs: 55446050500
56023912300
57000644800
55849312100
Author Affiliations: Bhattacharya, R., IIT Delhi, Delhi, India
Basu, A., IIT Delhi, Delhi, India
Rawat, K., IIT Delhi, Delhi, India
Koul, S.K., IIT Delhi, Delhi, India
Corresponding Author: Bhattacharya, R.; IIT DelhiIndia
Appears in Collections:Journal Publications [ECE]

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