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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/7972
Title: A Design Strategy for Bandwidth Enhancement in Three-Stage Doherty Power Amplifier with Extended Dynamic Range
Authors: Barthwal A.
Rawat, Karun
Koul S.K.
Published in: IEEE Transactions on Microwave Theory and Techniques
Abstract: This paper presents a design strategy to enhance the bandwidth of three-stage Doherty power amplifier (DPA) with operation upto 12-dB back-off. Based on the proposed strategy, a broadband 48-W DPA is designed and implemented using packaged CREE GaN transistors. The measured drain efficiency of 50%-61.8% at 12-dB back-off and 51.9%-66.2% at 6-dB back-off is obtained over the frequency range of 600-900 MHz. Over this 300-MHz band, the drain efficiency is between 51.1% and 78% at saturation. This corresponds to 40% fractional bandwidth. The three-stage DPA is also linearized with a three carrier 15-MHz WCDMA signal with a PAPR of 10.6 dB at various frequencies within operating band and shows the output signal qualifies spectral mask specifications. © 2017 IEEE.
Citation: IEEE Transactions on Microwave Theory and Techniques (2018), 66(2): 1024-1033
URI: https://doi.org/10.1109/TMTT.2017.2751044
http://repository.iitr.ac.in/handle/123456789/7972
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Broadband
Doherty power amplifier (DPA)
efficiency enhancement
GaN
load modulation
three stage
ISSN: 189480
Author Scopus IDs: 57025003000
57000644800
55849312100
Author Affiliations: Barthwal, A., Centre for Applied Research in Electronics, Delhi, 110016, India
Rawat, K., Indian Institute of Technology Delhi, Delhi, 110016, India, Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Koul, S.K., Centre for Applied Research in Electronics, Delhi, 110016, India
Funding Details: Manuscript received June 26, 2017; accepted August 25, 2017. Date of publication September 21, 2017; date of current version February 5, 2018. This work was supported by the Department of Science and Technology, Government of India Extra Mural under Grant SB/S3/EECE/047/2014. (Corresponding author: Ayushi Barthwal.) A. Barthwal and S. K. Koul are with the Centre for Applied Research in Electronics, IIT Delhi, Delhi 110016, India (e-mail: barthwal.ayushi1988@gmail.com; shiban_koul@hotmail.com). She was a Student Research Assistant under the GATE Fellowship of Ministry of Human Resource, Government of India. She was an Assistant Pro-fessor with Galgotias University, Greater Noida, India. Her current research interests include microwave active circuit design and advanced power amplifier architectures for upcoming high data-rate communication.
Corresponding Author: Barthwal, A.; Centre for Applied Research in ElectronicsIndia; email: barthwal.ayushi1988@gmail.com
Appears in Collections:Journal Publications [ECE]

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