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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/7969
Title: A degradation model of double gate and gate-all-around MOSFETs with interface trapped charges including effects of channel mobile charge carriers
Authors: Shankar R.
Kaushal G.
Maheshwaram S.
Dasgupta, Sudeb
Manhas, Sanjeev Kumar
Published in: IEEE Transactions on Device and Materials Reliability
Abstract: The reliability of multigate metal-oxide-semiconductor (MOS) devices is an important issue for novel nanoscale complementary MOS (CMOS) technologies. We present an analytic degradation model of double-gate (DG) and gate-all-around (GAA) MOS field-effect transistors (MOSFETs) in the presence of localized interface charge. Furthermore, we consider the effect of channel mobile charge carriers that significantly enhances the accuracy of our model. In our model, an accurate definition of threshold voltage in terms of minimum channel carrier density is used. The proposed model accurately depicts the effect of hot-carrier-induced degradation (HCD) on the surface potential, threshold voltage, and subthreshold swing. The results show a good agreement with the technology computer-aided design (TCAD) SENTAURUS device simulator over a wide range of device parameters. The modeling results show that the HCD effect become more dominant for scaled-down DG/GAA MOSFET devices. A comparative HCD degradation analysis carried for DG and GAA MOSFETs to understand their reliability limits show that GAA has greater immunity to HCD than DG MOSFET. This highlights model accuracy and provides crucial insights for HCD-tolerant multigate MOSFET design. © 2001-2011 IEEE.
Citation: IEEE Transactions on Device and Materials Reliability (2014), 14(2): 689-697
URI: https://doi.org/10.1109/TDMR.2014.2310292
http://repository.iitr.ac.in/handle/123456789/7969
Issue Date: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: localized interface trap charge
Multi-gate MOSFETs
surface potential
threshold voltage and subthreshold slope degradation
ISSN: 15304388
Author Scopus IDs: 57196611221
24178210100
42161683700
57191737302
6602269066
Author Affiliations: Shankar, R., Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India
Kaushal, G., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India
Maheshwaram, S., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India
Dasgupta, S., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India
Manhas, S.K., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India
Appears in Collections:Journal Publications [ECE]

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