Skip navigation
Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/5330
Full metadata record
DC FieldValueLanguage
dc.contributor.authorBhardwaj V.-
dc.contributor.authorKumar A.-
dc.contributor.authorChowdhury, Rajib-
dc.contributor.authorJayaganthan R.-
dc.date.accessioned2020-10-06T14:54:06Z-
dc.date.available2020-10-06T14:54:06Z-
dc.date.issued2018-
dc.identifier.citationJournal of Materials Research(2018), 33(17): 2533-2544-
dc.identifier.issn8842914-
dc.identifier.urihttps://doi.org/10.1557/jmr.2018.154-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/5330-
dc.description.abstractMechanical properties of Pr (praseodymium)-doped ZnO thin films, deposited on a corning glass substrate and fused quartz at different deposition pressures using DC sputtering were investigated. Crystalline growth in Pr-doped ZnO thin films is more pronounced and improves at 10 mtorr deposition pressure. However, lower sputtering deposition pressure evoked deposition rates to the formation of polycrystalline films emerged in several crystal planes. Pr ions incorporated in the ZnO host lattice was examined by X-ray photoelectron spectroscopy (XPS), AFM, and FESEM. XPS spectroscopy revealed the presence of Pr3+ and Pr4+ at the ZnO surface layer and it was in tandem with EDS mapping. Nanoindentation prior to scratch testing is used for analyzing deformation characteristics. Pr-doped ZnO thin films exhibit better hardness (9.89 ± 0.14 GPa) and Young's modulus (112.12 ± 3.45 GPa) on the glass substrate. The crack propagation resistance parameter of the films was evaluated using initial critical load, Lc1 ? 2250.5 ?N for the crack initiation and upper critical load Lc2 ? 2754.5 ?N for film failure. Better crack propagation resistance was observed for films deposited at 10 mtorr sputtering pressure on both substrates, attributed to better crystalline nature of the films. © 2018 Materials Research Society.-
dc.language.isoen_US-
dc.publisherCambridge University Press-
dc.relation.ispartofJournal of Materials Research-
dc.subjectnanoindentation-
dc.subjectnanoscratch-
dc.subjectPr-doped ZnO thin films-
dc.subjectsputtering-
dc.titleNanoindentation and nanoscratch behavior of ZnO:Pr thin films deposited by DC sputtering-
dc.typeArticle-
dc.scopusid57190610026-
dc.scopusid57202315438-
dc.scopusid10046255200-
dc.scopusid6602183770-
dc.affiliationBhardwaj, V., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India-
dc.affiliationKumar, A., Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee, 247667, India-
dc.affiliationChowdhury, R., Department of Civil Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India-
dc.affiliationJayaganthan, R., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Department of Engineering Design, Indian Institute of Technology Madras, Chennai, 600036, India-
dc.description.correspondingauthorJayaganthan, R.; Department of Metallurgical and Materials Engineering, Indian Institute of Technology RoorkeeIndia; email: rjayafmt@iitr.ac.in-
Appears in Collections:Journal Publications [CE]

Files in This Item:
There are no files associated with this item.
Show simple item record


Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.