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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/5330
Title: Nanoindentation and nanoscratch behavior of ZnO:Pr thin films deposited by DC sputtering
Authors: Bhardwaj V.
Kumar A.
Chowdhury R.
Jayaganthan R.
Published in: Journal of Materials Research
Abstract: Mechanical properties of Pr (praseodymium)-doped ZnO thin films, deposited on a corning glass substrate and fused quartz at different deposition pressures using DC sputtering were investigated. Crystalline growth in Pr-doped ZnO thin films is more pronounced and improves at 10 mtorr deposition pressure. However, lower sputtering deposition pressure evoked deposition rates to the formation of polycrystalline films emerged in several crystal planes. Pr ions incorporated in the ZnO host lattice was examined by X-ray photoelectron spectroscopy (XPS), AFM, and FESEM. XPS spectroscopy revealed the presence of Pr3+ and Pr4+ at the ZnO surface layer and it was in tandem with EDS mapping. Nanoindentation prior to scratch testing is used for analyzing deformation characteristics. Pr-doped ZnO thin films exhibit better hardness (9.89 ± 0.14 GPa) and Young's modulus (112.12 ± 3.45 GPa) on the glass substrate. The crack propagation resistance parameter of the films was evaluated using initial critical load, Lc1 ? 2250.5 ?N for the crack initiation and upper critical load Lc2 ? 2754.5 ?N for film failure. Better crack propagation resistance was observed for films deposited at 10 mtorr sputtering pressure on both substrates, attributed to better crystalline nature of the films. © 2018 Materials Research Society.
Citation: Journal of Materials Research(2018), 33(17): 2533-2544
URI: https://doi.org/10.1557/jmr.2018.154
http://repository.iitr.ac.in/handle/123456789/5330
Issue Date: 2018
Publisher: Cambridge University Press
Keywords: nanoindentation
nanoscratch
Pr-doped ZnO thin films
sputtering
ISSN: 8842914
Author Scopus IDs: 57190610026
57202315438
10046255200
6602183770
Author Affiliations: Bhardwaj, V., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Kumar, A., Institute Instrumentation Centre, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Chowdhury, R., Department of Civil Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Jayaganthan, R., Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Department of Engineering Design, Indian Institute of Technology Madras, Chennai, 600036, India
Corresponding Author: Jayaganthan, R.; Department of Metallurgical and Materials Engineering, Indian Institute of Technology RoorkeeIndia; email: rjayafmt@iitr.ac.in
Appears in Collections:Journal Publications [CE]

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