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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/4193
Title: Acceptor states in Pd/n-GaAs devices and effect of hydrogenation
Authors: Srivastava P.C.
Chandra S.
Singh U.P.
Published in: Semiconductor Science and Technology
Abstract: Pd/n-GaAs devices have been fabricated and electrically characterized, before and after hydrogenation. The technique of hydrogenation is novel in the sense that the hydrogen absorbed in Pd provides a source of hydrogen at room temperature for its injection into GaAs by diffusion. The effective donor density decreases on hydrogenation. The forward bias C-V characteristics show the presence of two acceptor states at approximately 0.52 and approximately 0.72 eV for the unhydrogenated devices and at approximately 0.83 and approximately 0.92 eV for the hydrogenated devices. The likely origin of these states is discussed.
Citation: Semiconductor Science and Technology (1991), 6(12): 1126-1129
URI: https://doi.org/10.1088/0268-1242/6/12/004
http://repository.iitr.ac.in/handle/123456789/4193
Issue Date: 1991
ISSN: 2681242
Author Scopus IDs: 14319190900
7401671658
57203181883
Author Affiliations: Srivastava, P.C., Dept. of Phys., Banaras Hindu Univ., Varanasi, India
Chandra, S., Dept. of Phys., Banaras Hindu Univ., Varanasi, India
Singh, U.P., Dept. of Phys., Banaras Hindu Univ., Varanasi, India
Corresponding Author: Srivastava, P.C.; Dept. of Phys., Banaras Hindu Univ., Varanasi, India
Appears in Collections:Journal Publications [CY]

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