http://repository.iitr.ac.in/handle/123456789/4187
Title: | Al/n-Si diodes with low energy (∼100 eV) hydrogen ion implantation prior to metallization |
Authors: | Srivastava P.C. Colluza C. Chandra S. Singh U.P. |
Published in: | Solid State Electronics |
Abstract: | [No abstract available] |
Citation: | Solid State Electronics (1994), 37(3): 520-522 |
URI: | https://doi.org/10.1016/0038-1101(94)90021-3 http://repository.iitr.ac.in/handle/123456789/4187 |
Issue Date: | 1994 |
ISSN: | 381101 |
Author Scopus IDs: | 14319190900 6505699853 7401671658 57203181883 |
Author Affiliations: | Srivastava, P.C., Department of Physics Banaras Hindu University Varanasi, 221005, India Colluza, C., Department of Physics University of Rome 1 La Sapienza RomeItaly, Italy Chandra, S., Department of Physics Banaras Hindu University Varanasi, 221005, India Singh, U.P., Department of Physics Banaras Hindu University Varanasi, 221005, India |
Funding Details: | Acknowledgemenf--Qne of the authors (UPS) is thankful to the Council of Scientific and Industrial Research (CSIR), New Delhi for awarding SRF. |
Corresponding Author: | Srivastava, P.C.; Department of Physics Banaras Hindu University Varanasi, 221005, India |
Appears in Collections: | Journal Publications [CY] |
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