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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/4187
Title: Al/n-Si diodes with low energy (∼100 eV) hydrogen ion implantation prior to metallization
Authors: Srivastava P.C.
Colluza C.
Chandra S.
Singh U.P.
Published in: Solid State Electronics
Abstract: [No abstract available]
Citation: Solid State Electronics (1994), 37(3): 520-522
URI: https://doi.org/10.1016/0038-1101(94)90021-3
http://repository.iitr.ac.in/handle/123456789/4187
Issue Date: 1994
ISSN: 381101
Author Scopus IDs: 14319190900
6505699853
7401671658
57203181883
Author Affiliations: Srivastava, P.C., Department of Physics Banaras Hindu University Varanasi, 221005, India
Colluza, C., Department of Physics University of Rome 1 La Sapienza RomeItaly, Italy
Chandra, S., Department of Physics Banaras Hindu University Varanasi, 221005, India
Singh, U.P., Department of Physics Banaras Hindu University Varanasi, 221005, India
Funding Details: Acknowledgemenf--Qne of the authors (UPS) is thankful to the Council of Scientific and Industrial Research (CSIR), New Delhi for awarding SRF.
Corresponding Author: Srivastava, P.C.; Department of Physics Banaras Hindu University Varanasi, 221005, India
Appears in Collections:Journal Publications [CY]

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