http://repository.iitr.ac.in/handle/123456789/4182| Title: | Donor states in Pd/p-GaAs devices and the effect of hydrogenation |
| Authors: | Singh U.P. Srivastava P.C. Chandra S. |
| Published in: | Semiconductor Science and Technology |
| Abstract: | The effect of hydrogenation on a Pd/p-GaAs diode in hydrogen gaseous ambient has been studied by I-V and C-V measurements. Hydrogenation has been found to improve the ideality factor of the diode. Reverse C-V characteristics show that the number of shallow and deep acceptors is reduced on hydrogenation. The forward C-V characteristics has shown the presence of interfacial deep donors at E c -1.05 eV and E c -0.88 eV, the density of which decreased on hydrogenation. The observed results are discussed in terms of the interaction of the diffusing hydrogen with the interface and bulk states of the Pd/GaAs structure. |
| Citation: | Semiconductor Science and Technology (1995), 10(10): 1368-1375 |
| URI: | https://doi.org/10.1088/0268-1242/10/10/011 http://repository.iitr.ac.in/handle/123456789/4182 |
| Issue Date: | 1995 |
| ISSN: | 2681242 |
| Author Scopus IDs: | 57203181883 14319190900 7401671255 |
| Author Affiliations: | Singh, U.P., Department of Physics, Banaras Hindu University, Varanasi-221005, India Srivastava, P.C., Department of Physics, Banaras Hindu University, Varanasi-221005, India Chandra, S., Department of Physics, Banaras Hindu University, Varanasi-221005, India |
| Corresponding Author: | Singh, U.P.; Department of Physics, Banaras Hindu University, Varanasi-221005, India |
| Appears in Collections: | Journal Publications [CY] |
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