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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/4182
Title: Donor states in Pd/p-GaAs devices and the effect of hydrogenation
Authors: Singh U.P.
Srivastava P.C.
Chandra S.
Published in: Semiconductor Science and Technology
Abstract: The effect of hydrogenation on a Pd/p-GaAs diode in hydrogen gaseous ambient has been studied by I-V and C-V measurements. Hydrogenation has been found to improve the ideality factor of the diode. Reverse C-V characteristics show that the number of shallow and deep acceptors is reduced on hydrogenation. The forward C-V characteristics has shown the presence of interfacial deep donors at E c -1.05 eV and E c -0.88 eV, the density of which decreased on hydrogenation. The observed results are discussed in terms of the interaction of the diffusing hydrogen with the interface and bulk states of the Pd/GaAs structure.
Citation: Semiconductor Science and Technology (1995), 10(10): 1368-1375
URI: https://doi.org/10.1088/0268-1242/10/10/011
http://repository.iitr.ac.in/handle/123456789/4182
Issue Date: 1995
ISSN: 2681242
Author Scopus IDs: 57203181883
14319190900
7401671255
Author Affiliations: Singh, U.P., Department of Physics, Banaras Hindu University, Varanasi-221005, India
Srivastava, P.C., Department of Physics, Banaras Hindu University, Varanasi-221005, India
Chandra, S., Department of Physics, Banaras Hindu University, Varanasi-221005, India
Corresponding Author: Singh, U.P.; Department of Physics, Banaras Hindu University, Varanasi-221005, India
Appears in Collections:Journal Publications [CY]

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