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Title: Hydrogenation and annealing studies on swift heavy ion (Au7+) irradiated Pd/p-Si devices
Authors: Pandey S.P.
Bhattacharya B.
Singh U.P.
Asokan K.
Published in: Journal of Optoelectronics and Advanced Materials
Abstract: Electronic properties of the Pd/p-Si devices have been studied from J-V and C-V characteristics as a function of irradiation fluence, hydrogenation and annealing temperatures to understand the phenomenon of degradation of Pd/p-Si devices when exposed with swift heavy ions, 100 MeV Au(7+). It has been found that the diode characteristics of the devices become poor and show an increased resistivity after irradiation. The irradiated devices were hydrogenated with an aim to repair the irradiation damage. Annealing of these devices was carried out at temperatures ranging from 100°C to 400°C. The I-R spectroscopic studies on the irradiated and subsequently annealed devices show the presence of vacancies and their complexes with impurities like hydrogen, carbon and oxygen. The results have been discussed in the realm of radiation induced compensating defects causing the carrier removal phenomenon to increase the resistivity of the devices on irradiation.
Citation: Journal of Optoelectronics and Advanced Materials (2009), 11(2): 186-191
Issue Date: 2009
Keywords: Hydrogenation
Pd/Si system
Radiation induced defects
Swift ion irradiation
ISSN: 14544164
Author Scopus IDs: 7402453258
Author Affiliations: Pandey, S.P., Galgotia College of Engineering and Technology, Greater Noida (U.P), India
Bhattacharya, B., Hindustan College of Science and Technology, Farah, Mathura, India
Singh, U.P., KIIT University, Bhubaneshwar, India
Asokan, K., IUAC (Nuclear Science Centre), Aruna Asaf Ali Marg, New Delhi, India
Corresponding Author: Pandey, S. P.; Galgotia College of Engineering and Technology, Greater Noida (U.P), India; email:
Appears in Collections:Journal Publications [CY]

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