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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/4129
Title: Structural evolution of TiO2 nanocrystalline thin films by thermal annealing and swift heavy ion irradiation
Authors: Rath H.
Dash P.
Som T.
Satyam P.V.
Singh U.P.
Kulriya P.K.
Kanjilal D.
Avasthi D.K.
Mishra N.C.
Published in: Journal of Applied Physics
Abstract: The present study probes into the transition from anatase to rutile phase of TiO2 in 100 nm thick nanocrystalline thin films under thermal annealing and swift heavy ion (SHI) irradiation. The films were prepared using sol-gel and spin coating techniques on silicon (100) substrates. The as-deposited films are found to be amorphous by glancing angle x-ray diffraction and Raman spectroscopy. Though thermal annealing is known to cause transformation from anatase to rutile phase of TiO2 in a temperature interval of 700-900 °C, in nanoparticle thin films, we found that a sizable volume fraction of anatase still remains even after annealing at 1000 °C. Irradiations by 200 MeV Ag ions on the other hand suppressed the anatase phase and almost phase pure rutile TiO2 could be obtained at a fluence of 3× 1012 ions cm-2. A mechanism based on the competing effect of grain growth and conversion of anatase to rutile at the grain boundary of the anatase on annealing and conversion of anatase to rutile in the grains of the anatase due to SHI induced thermal spike is proposed to explain the observed result. © 2009 American Institute of Physics.
Citation: Journal of Applied Physics (2009), 105(7): -
URI: https://doi.org/10.1063/1.3103333
http://repository.iitr.ac.in/handle/123456789/4129
Issue Date: 2009
ISSN: 218979
Author Scopus IDs: 55397429100
57197044068
7003595645
7003499569
57203181883
12143946700
26642946700
7006601523
35466198800
Author Affiliations: Rath, H., Department of Physics, Utkal University, Bhubaneswar 751004, India
Dash, P., Department of Physics, Utkal University, Bhubaneswar 751004, India
Som, T., Institute of Physics, Bhubaneswar 751005, India
Satyam, P.V., Institute of Physics, Bhubaneswar 751005, India
Singh, U.P., KIIT University, Bhubaneswar 751004, India
Kulriya, P.K., Inter-University, Accelerator Centre, New Delhi 110 067, India
Kanjilal, D., Inter-University, Accelerator Centre, New Delhi 110 067, India
Avasthi, D.K., Inter-University, Accelerator Centre, New Delhi 110 067, India
Mishra, N.C., Department of Physics, Utkal University, Bhubaneswar 751004, India
Funding Details: We thank the UGC-DAE Consortium for Scientific Research, Kolkata for their financial support for this project. We are also thankful to IUAC, New Delhi for providing ion irradiation, XRD, and Raman facility. FIG. 1. GAXRD patterns of the TiO 2 thin films on Si (100) wafers as a function of annealing temperatures: (a) RT (as deposited), (b) 400   ° C , (c) 700   ° C , (d) 800   ° C , and (e) 1000   ° C . FIG. 2. Evolution of anatase crystallite sizes with annealing temperature. FIG. 3. Raman spectra of the TiO 2 thin films on Si (100) wafers as a function of annealing temperatures: (a) RT (as deposited), (b) 700   ° C , (c) 900   ° C , and (d) 1000   ° C . Anatase and rutile peaks are designated as A and R. FIG. 4. GAXRD of TiO 2 thin films annealed at 1000   ° C and irradiated with 200 MeV Ag ion at fluences of (a) 0 (pristine), (b) 5 × 10 11 , (c) 1 × 10 12 , and (d) 3 × 10 12   ions   cm − 2 . The inset shows the evolution of total integrated intensity of XRD peaks and the intensity due to individual phases with irradiation fluence. FIG. 5. Raman spectra of TiO 2 thin films annealed at 1000   ° C and irradiated with 200 MeV Ag ion at fluences of (a) 0 (pristine), (b) 5 × 10 11 , (c) 1 × 10 12 , and (d) 3 × 10 12   ions   cm − 2 .
Corresponding Author: Rath, H.; Department of Physics, Utkal University, Bhubaneswar 751004, India
Appears in Collections:Journal Publications [CY]

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