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dc.contributor.authorPanda R.-
dc.contributor.authorPanda M.-
dc.contributor.authorRath H.-
dc.contributor.authorDash P.-
dc.contributor.authorNaik R.-
dc.contributor.authorSingh U.P.-
dc.contributor.authorMishra N.C.-
dc.date.accessioned2020-10-06T14:31:25Z-
dc.date.available2020-10-06T14:31:25Z-
dc.date.issued2014-
dc.identifier.citationAdvanced Science Letters (2014), 20(43894): 631-634-
dc.identifier.issn19366612-
dc.identifier.urihttps://doi.org/10.1166/asl.2014.5425-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/4088-
dc.description.abstractPolycrystalline AgInSe2 thin films were prepared by DC magnetron sputtering on glass substrate. The selenization process was adopted for the preparation of the film from Ag/In/Ag/In multilayer stack. The multilayer films were selenized and annealed at various temperatures. Evolution of the composition and structure of the films with selenization temperature and then on annealing each selenized films at different temperatures was studied by X-ray diffraction. The study revealed that the prepared films have polycrystalline structure with AgInSe2 as the major phase. The other phase is Ag2Se, whose volume fraction depended on the selenization and annealing temperatures. A systematic search by comparing the phase composition and structure of different films revealed that the film selenized at 350 °C and annealed at 500 °C is the optimum condition for preparing AgInSe2 with lattice parameter c/a ratio close to that of ideal chalcopyrite structure. The results obtained thus lead to a better understanding of the growth processes of Chalcopyrite AgInSe2 thin films. © 2014 American Scientific Publishers All rights reserved.-
dc.language.isoen_US-
dc.publisherAmerican Scientific Publishers-
dc.relation.ispartofAdvanced Science Letters-
dc.subjectAnnealing-
dc.subjectChalcogenide-
dc.subjectChalcopyrite-
dc.subjectSelenization-
dc.titleOptimization of selenization and sintering conditions of DC magnetron sputtered Ag/In/Ag/In multi-layer metal precursor for Preparation of AgInSe2 thin films-
dc.typeArticle-
dc.scopusid49864183100-
dc.scopusid57209058703-
dc.scopusid55397429100-
dc.scopusid57197044068-
dc.scopusid24830816500-
dc.scopusid57203181883-
dc.scopusid35466198800-
dc.affiliationPanda, R., Department of Physics, Utkal University, Vani Vihar, Bhubaneswar, 751004, India-
dc.affiliationPanda, M., Department of Physics, Utkal University, Vani Vihar, Bhubaneswar, 751004, India-
dc.affiliationRath, H., Department of Physics, Utkal University, Vani Vihar, Bhubaneswar, 751004, India-
dc.affiliationDash, P., Department of Physics, Utkal University, Vani Vihar, Bhubaneswar, 751004, India-
dc.affiliationNaik, R., Department of Physics, Utkal University, Vani Vihar, Bhubaneswar, 751004, India-
dc.affiliationSingh, U.P., KIIT University, Bhubaneswar, 751024, India-
dc.affiliationMishra, N.C., Department of Physics, Utkal University, Vani Vihar, Bhubaneswar, 751004, India-
dc.description.correspondingauthorPanda, R.; Department of Physics, Utkal University, Vani Vihar, Bhubaneswar, 751004, India-
Appears in Collections:Journal Publications [CY]

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