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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/4052
Title: 100 keV H + ion irradiation of as-deposited Al-doped ZnO thin films: An interest in tailoring surface morphology for sensor applications
Authors: Sahoo S.K.
Mangal S.
Mishra D.K.
Singh U.P.
Kumar P.
Published in: Surface and Interface Analysis
Abstract: We report the influence of 100 keV H + ion beam irradiation on the surface morphology, crystalline structure, and transport properties of as-deposited Al-doped ZnO (Al:ZnO) thin films. The films were deposited on silicon (Si) substrate by using DC sputtering technique. The ion irradiation was carried out at various fluences ranging from 1.0 × 10 12 to 3.0 × 10 14  ions/cm 2 . The virgin and ion-irradiated films were characterized by X-ray diffraction, Raman spectroscopy, atomic force microscopy, and Hall probe measurements. Using X-ray diffraction spectra, 5 points Williamson-Hall plots were drawn to deduce the crystallite site and strain in Al:ZnO films. The analysis of the measurements shows that the films are almost radiation resistant in the structural deformation under chosen irradiation conditions. With beam irradiation, the transport properties of the films are also preserved (do not vary orders of magnitude). However, the surface roughness and the crystallite size, which are crucial parameters of the ZnO film as a gas sensor, are at variation with the ion fluence. As ion fluence increases, the root-mean-square surface roughness oscillates and the surface undergoes for smoothening with irradiation at chosen highest fluence. The crystallite size decreases initially, increases for intermediate fluences, and drops almost to the value of the pristine film at highest fluence. In the paper, these interesting experimental results are discussed in correlations with ion-matter interactions especially energy losses by the ion beam in the material. Copyright © 2018 John Wiley & Sons, Ltd.
Citation: Surface and Interface Analysis (2018), 50(7): 705-712
URI: https://doi.org/10.1002/sia.6461
http://repository.iitr.ac.in/handle/123456789/4052
Issue Date: 2018
Publisher: John Wiley and Sons Ltd
Keywords: Al-doped ZnO
atomic force microscopy
ion beam irradiation
sputtering
thin film
ISSN: 1422421
Author Scopus IDs: 57188591473
57196977238
55418736500
57203181883
56386480200
Author Affiliations: Sahoo, S.K., School of Applied Sciences, KIIT (Deemed to be University), Bhubaneswar, Odisha 751024, India
Mangal, S., School of Applied Sciences, KIIT (Deemed to be University), Bhubaneswar, Odisha 751024, India
Mishra, D.K., Department of Physics, Faculty of Engineering and Technology (ITER), Siksha ‘O’ Anusandhan (Deemed to be University), Bhubaneswar, Odisha 751030, India
Singh, U.P., School of Electronics Engineering, KIIT (Deemed to be University), Bhubaneswar, Odisha 751024, India
Kumar, P., Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India
Corresponding Author: Kumar, P.; Inter University Accelerator Centre, Aruna Asaf Ali Marg, India; email: vishakhapk@gmail.com
Appears in Collections:Journal Publications [CY]

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