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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/4050
Title: Annealing induced AgInSe2 formation from Ag/In/Ag/In multilayer film for solar cell absorbing layer
Authors: Panda R.
Panda M.
Rath H.
Singh U.P.
Naik R.
Mishra N.C.
Published in: Optical Materials
Abstract: In the present study, the AgInSe2 (AIS) thin films 500 nm in thickness were prepared by selenization of the Ag/In/Ag/In multilayer deposited by DC magnetron sputtering. The selenization was carried out at 250 °C and was followed by annealing at 450 °C, 475 °C and 500 °C. The selenized and annealed films were characterized by grazing incidence X-ray diffraction (GIXRD), UV-Visible-NIR spectroscopy, Field-Emission Scanning Electron Microscopy (FESEM) and Raman spectroscopy. The XRD analysis revealed the formation of the desired AgInSe2 phase along with Ag2Se (AS) impurity phase. The impurity Ag2Se phase is being diminished at higher annealing temperature (500 °C) resulting the formation of AgInSe2 phase. The super ionic nature of α-Ag2Se phase facilities the diffusion of Ag ion with its neighbouring tetrahedral sites. The low band gap Ag2Se impurity phase suppression by annealing at 500 °C lead to optical band gap increase. The Raman spectrum shows individual AgInSe2 and Ag2Se peaks and also the overlapping of these two phases. The Ag2Se peaks are vanished after annealing. The EDXRF study revealed that the film is off-stoichiometric and exhibit n-type conductivity. The RBS analysis indicates the diffusion of the film material to the glass substrate. From Hall measurement it is confirmed that the film shows n-type conductivity and the resistivity decreases with increasing the annealing temperature. © 2018 Elsevier B.V.
Citation: Optical Materials (2018), 84(): 618-624
URI: https://doi.org/10.1016/j.optmat.2018.07.049
http://repository.iitr.ac.in/handle/123456789/4050
Issue Date: 2018
Publisher: Elsevier B.V.
Keywords: Annealing
Electrical property
Optical properties
Silver indium selenide
Thin film
ISSN: 9253467
Author Scopus IDs: 49864183100
57209058703
55397429100
57203181883
24830816500
35466198800
Author Affiliations: Panda, R., Department of Physics, Utkal University, VaniVihar, Bhubaneswar, 751004, India
Panda, M., IGCAR, Kalpakkam, Tamilnadu 603102, India
Rath, H., Institute of Physics, Bhubaneswar, 751001, India
Singh, U.P., KIIT University, Bhubaneswar, 751024, India
Naik, R., Department of Physics, Utkal University, VaniVihar, Bhubaneswar, 751004, India
Mishra, N.C., Department of Physics, Utkal University, VaniVihar, Bhubaneswar, 751004, India
Funding Details: The authors thank Department of Science and Technology (DST), Govt of India for DST-INSPIRE Research (Grant Number PH-IFA-11 ) grant and using the National Facility for Optical Spectrometry at Department of Physics, IISc, Bangalore.
Corresponding Author: Naik, R.; Department of Physics, Utkal University, VaniVihar, India; email: ramakanta.naik@gmail.com
Appears in Collections:Journal Publications [CY]

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