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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/3775
Title: Effect of anion on the homogeneous precipitation of precursors and their thermal decomposition to zinc oxide
Authors: Srikanth C.K.
Jeevanandam, Pethaiyan
Published in: Journal of Alloys and Compounds
Abstract: The effect of using different anions (Cl-, SO42-, NO3-, and CH3COO-) during the synthesis of precursors to ZnO, by homogeneous precipitation, was studied. The precursors of ZnO were synthesized by homogeneous precipitation using various zinc salts, and urea as the precipitating agent. When Cl- and SO42- were used as the anions, single precursor phases were obtained, while the remaining anions (NO3-, and CH3COO-) produced mixed phases. All the precursors were calcined in air, based on their decomposition temperatures, to produce ZnO. The precursors and the oxides were characterized by an array of techniques including FT-IR, AAS, CHNS analysis, TGA, FE-SEM, TEM, UV-Vis spectroscopy, and XRD. The size and shape of the precursor particles and ZnO were found to depend on the anion used. The effect of varying the synthetic conditions such as concentrations of Zn2+ source and urea were also studied. © 2009 Elsevier B.V. All rights reserved.
Citation: Journal of Alloys and Compounds (2009), 486(43832): 677-684
URI: https://doi.org/10.1016/j.jallcom.2009.07.031
http://repository.iitr.ac.in/handle/123456789/3775
Issue Date: 2009
Keywords: Oxide materials
Precipitation
Semiconductors
ISSN: 9258388
Author Scopus IDs: 26536613700
6603602593
Author Affiliations: Srikanth, C.K., Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Jeevanandam, P., Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Corresponding Author: Jeevanandam, P.; Department of Chemistry, Indian Institute of Technology Roorkee, Roorkee, 247667, India; email: jeevafcy@iitr.ernet.in
Appears in Collections:Journal Publications [CY]

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