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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/27647
Title: Influence of substrate temperature on the NiO thin films for p -NiO/ n -Si UV-visible photodetector
Authors: Chaoudhary S.
Dewasi A.
Mitra, Anirban
Rastogi V.
Shekhawat M.S.
Bhardwaj S.
Suthar B.
Published in: AIP Conference Proceedings
3rd International Conference on Condensed Matter and Applied Physics, ICC 2019
Abstract: In this report NiO thin films were grown on glass substrates by using pulsed laser deposition technique under different substrate temperatures (200 °C to 500°C). X-ray diffraction analysis infers that the crystalline nature of the NiO thin films was improved significantly with substrate temperature. The transmittance of the deposited film enhanced with the increase of substrate temperature where as optical bandgap of the films decreased. Further, NiO thin film is grown on n-Si substrate at a substrate temperature of 400°C to fabricate p-NiO/n-Si heterojunction diode. The p-NiO/n-Si heterojunction diode exhibited good responsivity ~0.34 A/W under UV illumination and 0.07 A/W under solar simulated light biased at +8 V, respectively. © 2020 Author(s).
Citation: AIP Conference Proceedings (2020), 2220
URI: https://doi.org/10.1063/5.0001263
http://repository.iitr.ac.in/handle/123456789/27647
Issue Date: 2020
Publisher: American Institute of Physics Inc.
ISBN: 9780735419766
ISSN: 0094243X
Author Scopus IDs: 57216748413
57190933816
57209787039
7006364661
Author Affiliations: Chaoudhary, S., Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand247667, India
Dewasi, A., Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand247667, India
Mitra, A., Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand247667, India
Rastogi, V., Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand247667, India
Funding Details: Author would like to gratefully acknowledge Council of Scientific& Industrial Research (CSIR), Government of India for providing the research fellowship.
Corresponding Author: Chaoudhary, S.; Department of Physics, Uttarakhand, India; email: savt0107@gmail.com
Appears in Collections:Conference Publications [PH]

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