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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/27600
Title: Modeling of leakages in nano-scale DG MOSFET to implement low power SRAM: A device/circuit co-design
Authors: Sarkar D.
Ganguly S.
Datta D.
Sarab A.A.P.
Dasgupta, Sudeb
Published in: Proceedings of the IEEE International Conference on VLSI Design
20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems, VLSID'07
Abstract: Double-Gate (DG) MOSFET has emerged as one of the most promising devices for logic and memory circuit design in sub IOnm regime. In this paper, we investigate the gate-to-channel leakage, EDT, BTBT and subthreshold leakage for DG MOSFET. Simulations are performed using 2D Poisson-Schrödinger simulator with tight-binding Green's function approach. Then we analyze the effect of parameter variation to optimize low leakage SRAM cell using DG devices. The DG device/circuit co-design successfully demonstrates the benefit of using metal gate intrinsic body DG devices which significantly reduces BTBT and EDT in SRAM architecture. © 2007 IEEE.
Citation: Proceedings of the IEEE International Conference on VLSI Design (2007): 183-188
URI: https://doi.org/10.1109/VLSID.2007.110
http://repository.iitr.ac.in/handle/123456789/27600
Issue Date: 2007
Keywords: BTBT
Double-Gate
Leakage
SRAM
Sub-threshold
ISBN: 0769527620
9780769527628
ISSN: 10639667
Author Scopus IDs: 57197410405
14522410600
9732731800
12786424400
57191737302
Author Affiliations: Sarkar, D., IEEE, Department of Electronics and Instrumentation Engineering, Indian School of Mines, Dhanbad, 826004, India
Ganguly, S., IEEE, Department of Electronics and Instrumentation Engineering, Indian School of Mines, Dhanbad, 826004, India
Datta, D., IEEE, Department of Electronics and Instrumentation Engineering, Indian School of Mines, Dhanbad, 826004, India
Sarab, A.A.P., Department of Electronics and Instrumentation Engineering, Indian School of Mines, Dhanbad, 826004, India
Dasgupta, S., IEEE, Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, India
Funding Details: 
Corresponding Author: Sarkar, D.; Department of Electronics and Instrumentation Engineering, , Dhanbad, 826004, India
Appears in Collections:Conference Publications [ECE]

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