http://repository.iitr.ac.in/handle/123456789/27560| Title: | Analytical threshold voltage model of gate all around triple metal tunnel FET |
| Authors: | Bagga N. Dasgupta, Sudeb |
| Published in: | 2017 Conference on Emerging Devices and Smart Systems, ICEDSS 2017 2017 IEEE Conference on Emerging Devices and Smart Systems, ICEDSS 2017 |
| Abstract: | We analytically modeled the threshold voltage expression of Gate All Around Tripe Metal (GAATM) Tunnel FET in the present research endeavor. We have used the Trans-conductance Change Method (TCM) for extracting the threshold voltage of the GAATM TFET. The three different metals with different work functions are incorporated over the channel region, which helps to curb the ambipolar conduction and boost the ON current. The variability issues on the threshold voltage (Vth) are also studied and optimized the proposed GAATM TFET in terms of smaller Vth. © 2017 IEEE. |
| Citation: | 2017 Conference on Emerging Devices and Smart Systems, ICEDSS 2017 (2017): 146-149 |
| URI: | https://doi.org/10.1109/ICEDSS.2017.8073674 http://repository.iitr.ac.in/handle/123456789/27560 |
| Issue Date: | 2017 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Keywords: | Ambipolarity Nanowires Threshold Voltage Trans-conductance Tunnel FETs |
| ISBN: | 9781509055555 |
| Author Scopus IDs: | 56669683700 57191737302 |
| Author Affiliations: | Bagga, N., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India Dasgupta, S., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India |
| Funding Details: | |
| Appears in Collections: | Conference Publications [ECE] |
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