Skip navigation
Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/27560
Title: Analytical threshold voltage model of gate all around triple metal tunnel FET
Authors: Bagga N.
Dasgupta, Sudeb
Published in: 2017 Conference on Emerging Devices and Smart Systems, ICEDSS 2017
2017 IEEE Conference on Emerging Devices and Smart Systems, ICEDSS 2017
Abstract: We analytically modeled the threshold voltage expression of Gate All Around Tripe Metal (GAATM) Tunnel FET in the present research endeavor. We have used the Trans-conductance Change Method (TCM) for extracting the threshold voltage of the GAATM TFET. The three different metals with different work functions are incorporated over the channel region, which helps to curb the ambipolar conduction and boost the ON current. The variability issues on the threshold voltage (Vth) are also studied and optimized the proposed GAATM TFET in terms of smaller Vth. © 2017 IEEE.
Citation: 2017 Conference on Emerging Devices and Smart Systems, ICEDSS 2017 (2017): 146-149
URI: https://doi.org/10.1109/ICEDSS.2017.8073674
http://repository.iitr.ac.in/handle/123456789/27560
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Ambipolarity
Nanowires
Threshold Voltage
Trans-conductance
Tunnel FETs
ISBN: 9781509055555
Author Scopus IDs: 56669683700
57191737302
Author Affiliations: Bagga, N., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Dasgupta, S., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Funding Details: 
Appears in Collections:Conference Publications [ECE]

Files in This Item:
There are no files associated with this item.
Show full item record


Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.