http://repository.iitr.ac.in/handle/123456789/27558| Title: | Reduced Gate Capacitance of Dual Metal Double Gate over Single Metal Double Gate Tunnel FET: A Comparative Study |
| Authors: | Gupta D. Bagga N. Dasgupta, Sudeb |
| Published in: | Proc. IEEE Conference on Emerging Devices and Smart Systems, ICEDSS 2018 2018 IEEE Conference on Emerging Devices and Smart Systems, ICEDSS 2018 |
| Abstract: | The impact of Dual Metal work function over the Single Metal on the capacitance of the double gate Tunnel FET is explored in this paper. We have comparatively studied the capacitance and the transfer characteristics of Single Metal Double Gate (SMDG) and Dual Metal Double Gate (DMDG) Tunnel FET. In DMDG TFET we have found reduced gate capacitance (C gg ) due to the presence of metal of higher function near the drain. Since the contribution of C gd in the C gg is more as compared to C gs , miller capacitance reduces in DMDG TFETs. © 2018 IEEE. |
| Citation: | Proc. IEEE Conference on Emerging Devices and Smart Systems, ICEDSS 2018 (2018): 110-112 |
| URI: | https://doi.org/10.1109/ICEDSS.2018.8544366 http://repository.iitr.ac.in/handle/123456789/27558 |
| Issue Date: | 2018 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Keywords: | Capacitance Double Metal Gate (DMG) TFETs Single Metal Gate (SMG) TFETs Subthreshold slope TFETs |
| ISBN: | 9781538634790 |
| Author Scopus IDs: | 57205438424 56669683700 57191737302 |
| Author Affiliations: | Gupta, D., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India Bagga, N., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India Dasgupta, S., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India |
| Funding Details: | |
| Appears in Collections: | Conference Publications [ECE] |
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