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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/27417
Title: Demonstration of a Novel Ferroelectric-Dielectric Negative Capacitance Tunnel FET
Authors: Bagga N.
Chauhan N.
Anand, Bulusu
Dasgupta S.
Published in: 2019 IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019
2nd IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019
Abstract: In this paper, we propose a novel double gate Ferroelectric-Dielectric Negative Capacitance Tunnel FET (FDNC-TFET). A layer of ferroelectric material is kept near the source-channel junction to incorporate the impact of negative capacitance which arises due to the polarization of ferroelectric material. This amplifies the electric field and in turn enhances the tunneling probability. A well calibrated Sentaraus TCAD setup is used to simulate the proposed structure and the validity is proved by fitting the polarization-field curve with experimental data. We have compared the results of FDNC-TFET with Reference Tunnel FET (R-TFET) and found ~16× of improvement in the ON current. To justify the choice of ferroelectric-dielectric combination in the proposed structure, we have also compared the results of FDNC-TFET with the Full Ferroelectric Negative Capacitance Tunnel FET (FFNC-TFET), having a complete ferroelectric layer over the channel. The reported reduction in ambipolar current of our proposed work is ~25 times as compared to FFNC-TFET. © 2019 IEEE.
Citation: 2019 IEEE International Conference on Modeling of Systems Circuits and Devices, MOS-AK India 2019 (2019): 102-105
URI: https://doi.org/10.1109/MOS-AK.2019.8902381
http://repository.iitr.ac.in/handle/123456789/27417
Issue Date: 2019
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Band to Band Tunneling
Dielectric
Ferroelectric
Ferroelectric Polarization
Negative Capacitance
Tunnel FETs
ISBN: 9781538680070
Author Scopus IDs: 56669683700
57209393334
56247640700
57191737302
Author Affiliations: Bagga, N., Indian Institute of Technology Roorkee, Department of Electronics and Communication Engineering, Roorkee, India
Chauhan, N., National Institute of Technology, Department of Electronics EngineeringUttarakhand, India
Bulusu, A., Indian Institute of Technology Roorkee, Department of Electronics and Communication Engineering, Roorkee, India
Dasgupta, S., Indian Institute of Technology Roorkee, Department of Electronics and Communication Engineering, Roorkee, India
Funding Details: 
Appears in Collections:Conference Publications [ECE]

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