http://repository.iitr.ac.in/handle/123456789/25978
Title: | Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit |
Authors: | Dey R. Roy A. Pramanik, Tanmoy Guchhait S. Sonde S. Rai A. Register L.F. Banerjee S.K. |
Published in: | Journal of Applied Physics |
Abstract: | Quantum interference effects and electron-electron interactions are found to play an important role in two-dimensional (2D) bulk transport of topological insulator (TI) thin films, which were previously considered as 2D electron gas (2DEG) and explained on basis of Hikami-Larkin-Nagaoka formula and Lee-Ramakrishnan theory. The distinct massive Dirac-type band structure of the TI bulk state gives rise to quantum corrections to conductivity due to interference and interaction effects, which are quite different from that of a 2DEG. We interpret the experimental findings employing Lu-Shen theory particularly derived for the TI system in the 2D limit. The surface and the bulk conductions are identified based on slopes of logarithmic temperature-dependent conductivities with magnetic fields. The perpendicular field magnetoresistance is analyzed considering suppression of weak antilocalization/localization of the surface/bulk electrons by the applied field. We propose corresponding theoretical models to explain the parallel and tilted field magnetoresistance. The effect of the band structure is found to be crucial for an accurate explanation of the magnetotransport results in the TI thin film. © 2016 Author(s). |
Citation: | Journal of Applied Physics, 120(16) |
URI: | https://doi.org/10.1063/1.4965861 http://repository.iitr.ac.in/handle/123456789/25978 |
Issue Date: | 2016 |
Publisher: | American Institute of Physics Inc. |
Keywords: | Band structure Bismuth compounds Electron gas Electron-electron interactions Electrons Magnetoresistance Quantum chemistry Quantum interference devices Selenium compounds Thin films 2-D electron gas (2DEG) Interaction effect Logarithmic temperature Quantum correction Quantum interference effects Topological insulators Two Dimensional (2 D) Weak antilocalization Two dimensional electron gas |
ISSN: | 218979 |
Author Scopus IDs: | 57225425824 35180233300 55938287000 6602542843 26221975300 55672148400 35598581900 55566203800 |
Author Affiliations: | Dey, R., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Roy, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Pramanik, T., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Guchhait, S., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States, Laboratory for Physical Sciences, College Park, MD 20740, United States, Department of Physics, University of Maryland, College Park, MD 20742, United States Sonde, S., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Rai, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Register, L.F., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Banerjee, S.K., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States |
Funding Details: | This work was supported by the NRI SWAN and the NSF NNCI program. |
Appears in Collections: | Journal Publications [ECE] |
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