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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25978
Title: Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit
Authors: Dey R.
Roy A.
Pramanik, Tanmoy
Guchhait S.
Sonde S.
Rai A.
Register L.F.
Banerjee S.K.
Published in: Journal of Applied Physics
Abstract: Quantum interference effects and electron-electron interactions are found to play an important role in two-dimensional (2D) bulk transport of topological insulator (TI) thin films, which were previously considered as 2D electron gas (2DEG) and explained on basis of Hikami-Larkin-Nagaoka formula and Lee-Ramakrishnan theory. The distinct massive Dirac-type band structure of the TI bulk state gives rise to quantum corrections to conductivity due to interference and interaction effects, which are quite different from that of a 2DEG. We interpret the experimental findings employing Lu-Shen theory particularly derived for the TI system in the 2D limit. The surface and the bulk conductions are identified based on slopes of logarithmic temperature-dependent conductivities with magnetic fields. The perpendicular field magnetoresistance is analyzed considering suppression of weak antilocalization/localization of the surface/bulk electrons by the applied field. We propose corresponding theoretical models to explain the parallel and tilted field magnetoresistance. The effect of the band structure is found to be crucial for an accurate explanation of the magnetotransport results in the TI thin film. © 2016 Author(s).
Citation: Journal of Applied Physics, 120(16)
URI: https://doi.org/10.1063/1.4965861
http://repository.iitr.ac.in/handle/123456789/25978
Issue Date: 2016
Publisher: American Institute of Physics Inc.
Keywords: Band structure
Bismuth compounds
Electron gas
Electron-electron interactions
Electrons
Magnetoresistance
Quantum chemistry
Quantum interference devices
Selenium compounds
Thin films
2-D electron gas (2DEG)
Interaction effect
Logarithmic temperature
Quantum correction
Quantum interference effects
Topological insulators
Two Dimensional (2 D)
Weak antilocalization
Two dimensional electron gas
ISSN: 218979
Author Scopus IDs: 57225425824
35180233300
55938287000
6602542843
26221975300
55672148400
35598581900
55566203800
Author Affiliations: Dey, R., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Roy, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Pramanik, T., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Guchhait, S., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States, Laboratory for Physical Sciences, College Park, MD 20740, United States, Department of Physics, University of Maryland, College Park, MD 20742, United States
Sonde, S., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Rai, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Register, L.F., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Banerjee, S.K., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Funding Details: This work was supported by the NRI SWAN and the NSF NNCI program.
Appears in Collections:Journal Publications [ECE]

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