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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25977
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dc.contributor.authorDey R.-
dc.contributor.authorRoy A.-
dc.contributor.authorPramanik, Tanmoy-
dc.contributor.authorRai A.-
dc.contributor.authorHeon Shin S.-
dc.contributor.authorMajumder S.-
dc.contributor.authorRegister L.F.-
dc.contributor.authorBanerjee S.K.-
dc.date.accessioned2022-04-22T05:58:06Z-
dc.date.available2022-04-22T05:58:06Z-
dc.date.issued2017-
dc.identifier.citationApplied Physics Letters, 110(12)-
dc.identifier.issn36951-
dc.identifier.urihttps://doi.org/10.1063/1.4978691-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/25977-
dc.description.abstractWe electrically detect charge current induced spin polarization on the surface of a molecular beam epitaxy grown Bi2Te3 thin film in a two-terminal device with a ferromagnetic MgO/Fe contact and a nonmagnetic Ti/Au contact. The two-point resistance, measured in an applied magnetic field, shows a hysteresis tracking the magnetization of Fe. A theoretical estimate is obtained for the change in resistance on reversing the magnetization direction of Fe from coupled spin-charge transport equations based on the quantum kinetic theory. The order of magnitude and the sign of the hysteresis are consistent with the spin-polarized surface state of Bi2Te3. © 2017 Author(s).-
dc.language.isoen_US-
dc.publisherAmerican Institute of Physics Inc.-
dc.relation.ispartofApplied Physics Letters-
dc.subjectHysteresis-
dc.subjectMagnetization-
dc.subjectMolecular beam epitaxy-
dc.subjectPolarization-
dc.subjectQuantum chemistry-
dc.subjectThin films-
dc.subjectApplied magnetic fields-
dc.subjectCharge current-
dc.subjectCoupled spins-
dc.subjectMagnetization direction-
dc.subjectQuantum-kinetic theory-
dc.subjectSpin-polarized surface state-
dc.subjectTransport equation-
dc.subjectTwo-terminal devices-
dc.subjectSpin polarization-
dc.titleDetection of current induced spin polarization in epitaxial Bi2Te3 thin film-
dc.typeArticle-
dc.scopusid57225425824-
dc.scopusid35180233300-
dc.scopusid55938287000-
dc.scopusid55672148400-
dc.scopusid57193731918-
dc.scopusid57210240037-
dc.scopusid35598581900-
dc.scopusid55566203800-
dc.affiliationDey, R., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.affiliationRoy, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.affiliationPramanik, T., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.affiliationRai, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.affiliationHeon Shin, S., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.affiliationMajumder, S., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.affiliationRegister, L.F., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.affiliationBanerjee, S.K., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States-
dc.description.fundingThis work was supported by the NRI SWAN and the NSF NNCI Program. National Science Foundation, NSF; Niroo Research Institute, NRI-
Appears in Collections:Journal Publications [ECE]

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