Skip navigation
Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25976
Title: Intra-domain periodic defects in monolayer MoS2
Authors: Roy A.
Ghosh R.
Rai A.
Sanne A.
Kim K.
Movva H.C.P.
Dey R.
Pramanik, Tanmoy
Chowdhury S.
Tutuc E.
Banerjee S.K.
Published in: Applied Physics Letters
Abstract: We present an ultra-high vacuum scanning tunneling microscopy study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor deposition. A distinctive type of grain boundary periodically arranged inside an isolated triangular domain, along with other inter-domain grain boundaries of various types, is observed. These periodic defects, about 50 nm apart and a few nanometers in width, remain hidden in optical or low-resolution microscopy studies. We report a complex growth mechanism that produces 2D nucleation and spiral growth features that can explain the topography in our films. © 2017 Author(s).
Citation: Applied Physics Letters, 110(20)
URI: https://doi.org/10.1063/1.4983789
http://repository.iitr.ac.in/handle/123456789/25976
Issue Date: 2017
Publisher: American Institute of Physics Inc.
Keywords: Chemical vapor deposition
Deposition
Grain boundaries
Scanning tunneling microscopy
Topography
2-d nucleations
Growth mechanisms
Molybdenum disulfide
Periodic defects
Silicon substrates
Spiral growth features
Structural defect
Triangular domains
Defects
ISSN: 36951
Author Scopus IDs: 35180233300
56582726400
55672148400
55301096500
55953993600
51764085900
57225425824
55938287000
57214071295
6603910934
55566203800
Author Affiliations: Roy, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Ghosh, R., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Rai, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Sanne, A., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Kim, K., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Movva, H.C.P., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Dey, R., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Pramanik, T., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Chowdhury, S., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Tutuc, E., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Banerjee, S.K., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States
Funding Details: This work was supported in part by NRI SWAN and NSF NNCI. We appreciate technical support from Omicron.
Corresponding Author: Roy, A.; Microelectronics Research Center, United States; email: anupam@austin.utexas.edu
Appears in Collections:Journal Publications [ECE]

Files in This Item:
There are no files associated with this item.
Show full item record


Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.