http://repository.iitr.ac.in/handle/123456789/25973| Title: | Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films |
| Authors: | Zhang Z. Nallan H.C. Coffey B.M. Ngo T.Q. Pramanik, Tanmoy Banerjee S.K. Ekerdt J.G. |
| Published in: | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Abstract: | The authors report the deposition of 4.5-nm-thick cobalt (II) oxide on SiO 2 /Si(001) and MgO(001) substrates at 180-270 °C by atomic layer deposition using bis(N-tert-butyl-N′-ethylpropionamidinato) cobalt (II) and water as coreactants. The resulting CoO film is smooth and carbon-free. CoO can be reduced to Co metal using hydrogen or deuterium gas at 400-500 °C in a vacuum furnace, but the high temperature processing causes dewetting, leading to discontinuous Co metal islands rather than continuous films. Two low temperature (∼200 °C) reduction methods are reported: deuterium atom reduction and the use of an O-scavenging Al metal film. The low temperature methods can suppress dewetting to a large extent, and the resulting metallic cobalt film is smooth and continuous. © 2018 Author(s). |
| Citation: | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 37(1) |
| URI: | https://doi.org/10.1116/1.5063669 http://repository.iitr.ac.in/handle/123456789/25973 |
| Issue Date: | 2019 |
| Publisher: | AVS Science and Technology Society |
| Keywords: | Atomic layer deposition Atoms Deuterium Magnesia Metallic films Metals Oxide films Silica Temperature Ultrathin films Vacuum furnaces Continuous films High-temperature processing Low temperature method Low temperatures Low-temperature reduction Oxide substrates Reduction method Ultrathin cobalt Cobalt compounds |
| ISSN: | 7342101 |
| Author Scopus IDs: | 57190428305 56419971300 57205318735 55321434400 55938287000 55566203800 7005513883 |
| Author Affiliations: | Zhang, Z., McKetta Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712, United States, Lam Research Corp., Freemont, CA 94538, United States Nallan, H.C., McKetta Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712, United States Coffey, B.M., McKetta Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712, United States Ngo, T.Q., McKetta Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712, United States, Intermolecular Inc., San Jose, CA 95134, United States Pramanik, T., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Banerjee, S.K., Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, United States Ekerdt, J.G., McKetta Department of Chemical Engineering, University of Texas at Austin, Austin, TX 78712, United States |
| Funding Details: | This work was supported by the National Science Foundation (NSF) (Grant No. EEC-1160494). The magnetic characterization was supported by the NSF (No. NNCI-1542159) at the Texas Nanofabrication Facility. The authors wish to thank A. Dolocan for assistance with the TOF-SIMS analysis. National Science Foundation, NSF; Norsk Sykepleierforbund, NSF: NNCI-1542159; National Science Foundation, NSF: EEC-1160494 |
| Appears in Collections: | Journal Publications [ECE] |
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