http://repository.iitr.ac.in/handle/123456789/25948| Title: | A compact drain current and threshold voltage quantum mechanical analytical modeling for FinFETs |
| Authors: | Raj B. Saxena A.K. Dasgupta, Sudeb |
| Published in: | Journal of Nanoelectronics and Optoelectronics |
| Abstract: | In this paper, drain current and threshold voltage analytical quantum mechanical (QM) modeling of a FinFET structure is presented. The quantum inversion charge is also evaluated for the above device. The results obtained on the basis of our model, are compared and contrasted with reported classical and experimental results for the purpose of validation of our model. A close match was founded thereby validating our proposed QM analytical model. Copyright © 2008 American Scientific Publishers. All rights reserved. |
| Citation: | Journal of Nanoelectronics and Optoelectronics, 3(2): 163-170 |
| URI: | https://doi.org/10.1166/jno.2008.209 http://repository.iitr.ac.in/handle/123456789/25948 |
| Issue Date: | 2008 |
| Keywords: | Classical and quantum mechanical analytical modeling Quasi planar double-gate FinFET Short-channel effects Simulation Ultra thin channel |
| ISSN: | 1555130X |
| Author Scopus IDs: | 23009907800 22836231600 57191737302 |
| Author Affiliations: | Raj, B., Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, Roorkee 247667, India Saxena, A.K., Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, Roorkee 247667, India Dasgupta, S., Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee, Roorkee 247667, India |
| Funding Details: | |
| Corresponding Author: | Dasgupta, S.; Department of Electronics and Computer Engineering, , Roorkee 247667, India |
| Appears in Collections: | Journal Publications [ECE] |
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