Skip navigation
Please use this identifier to cite or link to this item:
Title: Analytical modeling for the estimation of leakage current and subthreshold swing factor of nanoscale double gate FinFET device
Authors: Raj B.
Saxena A.K.
Dasgupta, Sudeb
Published in: Microelectronics International
Abstract: Purpose - The aim of this paper is to formulate the effect of the process variation on various leakage currents and subthreshold swing factor in FinFET devices. These variations cause a large spread in leakage power, since it is extremely sensitive to process variations, which in turn results in larger temperature variations across different dies. Design/methodology/approach - Owing to large temperature variation within the die, the authors investigate the variation of various leakage currents with absolute die temperature. Findings - The results obtained on the basis of the model are compared and contrasted with reported numerical and experimental results. A close match was found which validates the analytical approach. Originality/value - The analytical modeling of subthreshold leakage current, subthreshold swing, gate leakage current and its variation with process parameters are carried out in this paper. © Emerald Group Publishing Limited.
Citation: Microelectronics International, 26(1): 53-63
Issue Date: 2009
Keywords: Electric current
Integrated circuits
Temperature measurement
ISSN: 13565362
Author Scopus IDs: 23009907800
Author Affiliations: Raj, B., Indian Institute of Technology, Roorkee, India
Saxena, A.K., Indian Institute of Technology, Roorkee, India
Dasgupta, S., Indian Institute of Technology, Roorkee, India
Funding Details: 
Corresponding Author: Dasgupta, S.; Indian Institute of Technology, Roorkee, India; email:
Appears in Collections:Journal Publications [ECE]

Files in This Item:
There are no files associated with this item.
Show full item record

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.