Analytical modeling for the estimation of leakage current and subthreshold swing factor of nanoscale double gate FinFET device

Abstract

Purpose - The aim of this paper is to formulate the effect of the process variation on various leakage currents and subthreshold swing factor in FinFET devices. These variations cause a large spread in leakage power, since it is extremely sensitive to process variations, which in turn results in larger temperature variations across different dies. Design/methodology/approach - Owing to large temperature variation within the die, the authors investigate the variation of various leakage currents with absolute die temperature. Findings - The results obtained on the basis of the model are compared and contrasted with reported numerical and experimental results. A close match was found which validates the analytical approach. Originality/value - The analytical modeling of subthreshold leakage current, subthreshold swing, gate leakage current and its variation with process parameters are carried out in this paper. © Emerald Group Publishing Limited.