Analytical modeling of a double gate mosfet considering source/drain lateral gaussian doping profile

Abstract

As the MOSFET is scaled into a nanoscale regime, spreading of source/drain (S/D) dopant into the channel region will facilitate the lateral electric field spread into the channel and in turn deteriorate the gate electrostatic integrity. The short channel effects and performance are aggravated with the increase in lateral straggle (σL) of S/D Gaussian profile. In this paper, we have developed an analytical potential model that includes the effect of σL. Subsequently, an expression for threshold voltage and linear/saturation region drain current is proposed and the effect of σL over the transconductance ( gm), output conductance (g ds), and intrinsic gain (A V0) is studied. © 1963-2012 IEEE.