http://repository.iitr.ac.in/handle/123456789/25894| Title: | Surface Potential and Drain Current Analytical Model of Gate All Around Triple Metal TFET |
| Authors: | Bagga N. Dasgupta, Sudeb |
| Published in: | IEEE Transactions on Electron Devices |
| Abstract: | The impact of triple metal with unalike work functions on the gate all around (GAA) tunnel FET is studied for the first time in this paper. An analytical model is introduced for surface potential and drain current of GAA triple metal tunnel FET with circular cross section, by using Poisson's equation and Kane's model. The modeling results are in good agreement with Synopsys 3-D TCAD results, thereby corroborating our analysis. The different metal work functions assist to create the potential barrier in the channel region to suppress the reverse tunneling from the drain side and also provides a more band bending at source end which revamp the drive current. © 1963-2012 IEEE. |
| Citation: | IEEE Transactions on Electron Devices, 64(2): 606-613 |
| URI: | https://doi.org/10.1109/TED.2016.2642165 http://repository.iitr.ac.in/handle/123456789/25894 |
| Issue Date: | 2017 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Keywords: | Gate all around (GAA) nanowires Poisson's equation subthreshold swing (SS) tunnel FETs (TFETs) work function engineering |
| ISSN: | 189383 |
| Author Scopus IDs: | 56669683700 57191737302 |
| Author Affiliations: | Bagga, N., Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, IIT Roorkee, Roorkee, 247667, India Dasgupta, S., Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, IIT Roorkee, Roorkee, 247667, India |
| Funding Details: | |
| Appears in Collections: | Journal Publications [ECE] |
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