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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25894
Title: Surface Potential and Drain Current Analytical Model of Gate All Around Triple Metal TFET
Authors: Bagga N.
Dasgupta, Sudeb
Published in: IEEE Transactions on Electron Devices
Abstract: The impact of triple metal with unalike work functions on the gate all around (GAA) tunnel FET is studied for the first time in this paper. An analytical model is introduced for surface potential and drain current of GAA triple metal tunnel FET with circular cross section, by using Poisson's equation and Kane's model. The modeling results are in good agreement with Synopsys 3-D TCAD results, thereby corroborating our analysis. The different metal work functions assist to create the potential barrier in the channel region to suppress the reverse tunneling from the drain side and also provides a more band bending at source end which revamp the drive current. © 1963-2012 IEEE.
Citation: IEEE Transactions on Electron Devices, 64(2): 606-613
URI: https://doi.org/10.1109/TED.2016.2642165
http://repository.iitr.ac.in/handle/123456789/25894
Issue Date: 2017
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Gate all around (GAA)
nanowires
Poisson's equation
subthreshold swing (SS)
tunnel FETs (TFETs)
work function engineering
ISSN: 189383
Author Scopus IDs: 56669683700
57191737302
Author Affiliations: Bagga, N., Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, IIT Roorkee, Roorkee, 247667, India
Dasgupta, S., Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, IIT Roorkee, Roorkee, 247667, India
Funding Details: 
Appears in Collections:Journal Publications [ECE]

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