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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25884
Title: A Novel Twofold Tunnel FET with Reduced Miller Capacitance: Proposal and Investigation
Authors: Bagga N.
Chauhan N.
Gupta D.
Dasgupta, Sudeb
Published in: IEEE Transactions on Electron Devices
Abstract: A novel twofold tunnel field-effect transistor (TF-TFET) is proposed and investigated for the first time in this paper. The physical characteristics and digital applications of the TF-TFET are demonstrated with rigorous simulation by using Sentaraus TCAD. The proposed TF-TFET is an admixture of both n- and p-type TFETs, and hence, this single device acts as an inverter. It helps to reduce the transistor count in the digital/analog applications. The impact of various device parameters on its performance has been studied extensively. The advantageous factor of the proposed TF-TFET is the presence of an additional capacitance at the drain junction, which helps to reduce the overall Miller capacitance. Moreover, the voltage transfer characteristics (VTC) and transient behavior of the TF-TFET inverter along with some standard cells like XOR gate and 2:1 MUX have been explored using mixed-mode simulation. © 1963-2012 IEEE.
Citation: IEEE Transactions on Electron Devices, 66(7): 3202-3208
URI: https://doi.org/10.1109/TED.2019.2914305
http://repository.iitr.ac.in/handle/123456789/25884
Issue Date: 2019
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Ambipolar
band-to-band tunneling
inverter
Miller capacitance
subthreshold slope (SS)
tunnel field-effect transistors (TFET)
ISSN: 189383
Author Scopus IDs: 56669683700
57209393334
57205438424
57191737302
Author Affiliations: Bagga, N., Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, IIT Roorkee, Roorkee, 247667, India
Chauhan, N., NIT Uttarakhand, Srinagar, 246174, India
Gupta, D., Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, IIT Roorkee, Roorkee, 247667, India
Dasgupta, S., Department of Electronics and Communication Engineering, Microelectronics and VLSI Group, IIT Roorkee, Roorkee, 247667, India
Funding Details: 
Corresponding Author: Dasgupta, S.; Department of Electronics and Communication Engineering, India; email: sudebfec@iitr.ac.in
Appears in Collections:Journal Publications [ECE]

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