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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25882
Title: Demonstration of a novel tunnel FET with channel sandwiched by drain
Authors: Bagga N.
Chauhan N.
Banchhor S.
Gupta D.
Dasgupta, Sudeb
Published in: Semiconductor Science and Technology
Abstract: A novel double gate tunnel FET with channel sandwiched by drain (CSD-TFET) is proposed and investigated in this paper. The proposed CSD-TFET consists of three differently doped drain layers in which the middle layer is an extension of the channel and is sandwiched by the heavily doped top and bottom drain layers. The objective of the proposed endeavor is to reduce the ambipolar current without affecting the ON current. We have compared the results of CSD-TFET with the reference tunnel FET (RTFET) designed by using the same simulation setup as opted for simulating the proposed CSD-TFET. The extracted ambipolar current of CSD-TFET is ∼104 times lower than that of RTEFT with no change in the ON current. An interesting flipping/crossover phenomenon in the gate-to-drain capacitance (Cgd) of the proposed CSD-TFET at a certain gate-to-drain voltage (VGD) is observed. We also discussed the saturation phenomenon of the drain current and the variation of unity gain frequency with Cgd © 2019 IOP Publishing Ltd.
Citation: Semiconductor Science and Technology, 35(1)
URI: https://doi.org/10.1088/1361-6641/ab5434
http://repository.iitr.ac.in/handle/123456789/25882
Issue Date: 2020
Publisher: Institute of Physics Publishing
Keywords: ambipolar current
band to band tunneling
drain doping
semiconductor devices
tunnel field effect transistor
ISSN: 2681242
Author Scopus IDs: 56669683700
57209393334
56879230200
57205438424
57191737302
Author Affiliations: Bagga, N., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Chauhan, N., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India, Department of Electronics Engineering, National Institute of Technology Uttarakhand, Srinagar, 246174, India
Banchhor, S., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Gupta, D., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Dasgupta, S., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India
Funding Details: 
Corresponding Author: Bagga, N.; Department of Electronics and Communication Engineering, India; email: navjeet.bagga9@gmail.com
Appears in Collections:Journal Publications [ECE]

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