http://repository.iitr.ac.in/handle/123456789/25601
Title: | Electron excitation of the Group IV elements |
Authors: | Srivastava, Rajesh McEachran R.P. Stauffer A.D. |
Published in: | Canadian Journal of Physics |
Abstract: | We investigated the electron excitation of the fine-structure levels of the 3P ground state and the first excited 1D state of the first four elements of Group IV: carbon, silicon, germanium, and tin. These calculations were carried out in the j-j coupling scheme using the relativistic distorted-wave method. Results are presented for the differential cross sections and spin-polarization parameters for incident electron energies of 25 and 40 eV. |
Citation: | Canadian Journal of Physics, 80(6): 687-696 |
URI: | https://doi.org/10.1139/p02-012 http://repository.iitr.ac.in/handle/123456789/25601 |
Issue Date: | 2002 |
ISSN: | 84204 |
Author Scopus IDs: | 7401868829 7004085318 22999128000 |
Author Affiliations: | Srivastava, R., Department of Physics, York University, Toronto, Ont. M3J 1P3, Canada McEachran, R.P., Department of Physics, York University, Toronto, Ont. M3J 1P3, Canada Stauffer, A.D., Department of Physics, York University, Toronto, Ont. M3J 1P3, Canada |
Funding Details: | |
Corresponding Author: | Stauffer, A.D.; Department of Physics, , Toronto, Ont. M3J 1P3, Canada; email: stauffer@yorku.ca |
Appears in Collections: | Journal Publications [PH] |
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