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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25601
Title: Electron excitation of the Group IV elements
Authors: Srivastava, Rajesh
McEachran R.P.
Stauffer A.D.
Published in: Canadian Journal of Physics
Abstract: We investigated the electron excitation of the fine-structure levels of the 3P ground state and the first excited 1D state of the first four elements of Group IV: carbon, silicon, germanium, and tin. These calculations were carried out in the j-j coupling scheme using the relativistic distorted-wave method. Results are presented for the differential cross sections and spin-polarization parameters for incident electron energies of 25 and 40 eV.
Citation: Canadian Journal of Physics, 80(6): 687-696
URI: https://doi.org/10.1139/p02-012
http://repository.iitr.ac.in/handle/123456789/25601
Issue Date: 2002
ISSN: 84204
Author Scopus IDs: 7401868829
7004085318
22999128000
Author Affiliations: Srivastava, R., Department of Physics, York University, Toronto, Ont. M3J 1P3, Canada
McEachran, R.P., Department of Physics, York University, Toronto, Ont. M3J 1P3, Canada
Stauffer, A.D., Department of Physics, York University, Toronto, Ont. M3J 1P3, Canada
Funding Details: 
Corresponding Author: Stauffer, A.D.; Department of Physics, , Toronto, Ont. M3J 1P3, Canada; email: stauffer@yorku.ca
Appears in Collections:Journal Publications [PH]

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