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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/25036
Title: Spacer engineering-based high-performance reconfigurable FET with low off current characteristics
Authors: Bhattacharjee A.
Saikiran M.
Dutta A.
Anand, Bulusu
Dasgupta, Sudeb
Published in: IEEE Electron Device Letters
Abstract: In this letter, we optimize and investigate for the first time the effect of source/drain spacer oxide on the performance of a dual gate ambipolar silicon nanowire field effect transistor. Using extensive 3-D TCAD simulations, we show that the OFF-state leakage can be reduced by more than two orders of magnitude owing to the combined use of HfO2 spacer and high-κ gate dielectric, resulting in an enhanced ON/OFF current ratio >1011 for both n and p-FET as compared with reported values of ~109. Comparing with the existing experimental dual and trigate ambipolar devices, 64.1% improvement in subthreshold slope for n-FET and 61.8% (40.9%) for n (p-FET) are observed. Having, an improvement in the ON-state current with JDmax of 767.51 (263.05) kA/cm-2 for n-FET (pFET), the device promises excellent ultra low power logic performance, with ambipolarity. © 1980-2012 IEEE.
Citation: IEEE Electron Device Letters, 36(5): 520-522
URI: https://doi.org/10.1109/LED.2015.2415039
http://repository.iitr.ac.in/handle/123456789/25036
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: ambipolarity
dual-Vt
Ion/Ioff
Si nanowire
spacer
ISSN: 7413106
Author Scopus IDs: 56611412900
56611876800
57225689867
56247640700
57191737302
Author Affiliations: Bhattacharjee, A., Microelectronics and VLSI Group, Department of Electronics and Communication Engineering, IIT Roorkee, Roorkee, 247667, India
Saikiran, M., Microelectronics and VLSI Group, Department of Electronics and Communication Engineering, IIT Roorkee, Roorkee, 247667, India
Dutta, A., Microelectronics and VLSI Group, Department of Electronics and Communication Engineering, IIT Roorkee, Roorkee, 247667, India
Anand, B., Microelectronics and VLSI Group, Department of Electronics and Communication Engineering, IIT Roorkee, Roorkee, 247667, India
Dasgupta, S., Microelectronics and VLSI Group, Department of Electronics and Communication Engineering, IIT Roorkee, Roorkee, 247667, India
Appears in Collections:Journal Publications [ECE]

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