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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24754
Title: Intercalation pseudocapacitance in Bi2Se3−MnO2 nanotube composite for high electrochemical energy storage
Authors: Pradhan M.
Chakraborty R.
Rudra S.
Koley S.
Maji, Pradip K.
Nayak A.K.
Das S.
Nandi U.
Published in: Electrochimica Acta
Abstract: Layered materials exhibit exclusive electrochemical properties centered on interlayer spaces. However, slow kinetics and poor cycling stability restrict overall performance. A possible solution to deliver high energy storage is by interfacial modification of layered materials, which can structurally allow the occurrence of intercalation pseudocapacitance at redox-capacitance timescale. In this work, MnO2 has been intercalated in-situ in layered Bi2Se3 for the first time to give Bi2Se3−MnO2 nanotube composite. Structural and morphological characterizations have been conducted elaborately by several experimental and theoretical studies. Electrokinetic measurements reveal a dominant capacitive mechanism of 69% at 60 mV s − 1. Ex-situ XRD analysis after electrochemical charge-discharge cycles show reversible shifts in c-axis containing Bi2Se3 (015) plane, which confirms intercalation pseudocapacitance. The nanocomposite demonstrates high specific capacitance (438 F g − 1 at 1 A g − 1 in a three-electrode system) in a wide potential window of 2 V. Moreover, a symmetric two-electrode system for Bi2Se3−MnO2 exhibits a high energy density of 62 Wh kg−1 and a power density of 2.7 kW kg−1 at 1 A g − 1 and 10 A g − 1, respectively, along with capacitance retention of 86% after 2000 cycles. The study gives promising direction to design integrated high energy and power density intercalation pseudocapacitive materials. © 2020
Citation: Electrochimica Acta, 367
URI: https://doi.org/10.1016/j.electacta.2020.137531
http://repository.iitr.ac.in/handle/123456789/24754
Issue Date: 2021
Publisher: Elsevier Ltd
Keywords: Enhanced van der Waals gap
High-energy storage
Intercalation pseudocapacitance
Nanotube morphology
Redox-mediated methodology
ISSN: 134686
Author Scopus IDs: 24759698700
57213123749
57202901140
57196347609
56249287900
8632753500
57220158453
56514971600
Author Affiliations: Pradhan, M., Department of Chemistry, National Institute of Technology Warangal, Warangal, Telangana 506004, India, Department of Chemistry, National Institute of Technology Meghalaya, Shillong, Meghalaya 793003, India
Chakraborty, R., Department of Chemistry, National Institute of Technology Meghalaya, Shillong, Meghalaya 793003, India
Rudra, S., Department of Chemistry, National Institute of Technology Meghalaya, Shillong, Meghalaya 793003, India
Koley, S., Department of Physics, Amity Institute of Applied Sciences, Amity University, Kolkata, West Bengal 700135, India
Maji, P.K., Department of Polymer & Process Engineering, Indian Institute of Technology Roorkee, Saharanpur Campus, Saharanpur, Uttar Pradesh 247001, India
Nayak, A.K., Department of Physics, School of Advanced Sciences, Vellore Institute of Technology, Vellore, Tamil Nadu 632014, India
Das, S., Department of Physics, Scottish Church College, 1 & 3 Urquhart Square, Kolkata, West Bengal 700006, India
Nandi, U., Department of Physics, Scottish Church College, 1 & 3 Urquhart Square, Kolkata, West Bengal 700006, India
Funding Details: Authors are thankful to Dr. Achinta Singha, Bose Institute and I IT Roorkee for analytical support; Prof. Tarasankar Pal, IIT Kharagpur for his valuable suggestions; Department of Chemistry, NIT Meghalaya , Department of Chemistry, NIT Warangal for providing research platform and DST INSPIRE grant (DST/ INSPIRE Faculty Award /2016/DST/INSPIRE/04/2015/003227 ) for financial support. S.K. acknowledges support from DST women scientist grant SR/WOS-A/PM-80/2016(G) . /2016/DST/INSPIRE/04/2015/003227, SR/WOS-A/PM-80/2016; Indian Institute of Technology Roorkee, IITR; Bose Institute
Corresponding Author: Pradhan, M.; Department of Chemistry, India; email: mukulchem@nitw.ac.in
Appears in Collections:Journal Publications [PE]

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