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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24613
Title: Effect of sulfur-doped graphene quantum dots incorporation on morphological, optical and electron transport properties of CH3NH3PbBr3 perovskite thin films
Authors: Kadian S.
Tailor N.K.
Chaulagain N.
Shankar K.
Satapathi, Soumitra
Manik, Gaurav
Published in: Journal of Materials Science: Materials in Electronics
Abstract: Organic–inorganic hybrid perovskite materials have recently attracted extensive interest to develop next-generation high efficiency optoelectronic devices. However, in many of these devices, perovskite thin films are the key source of photogenerated electron and hole pairs. Therefore, a strategy for the preparation of high-quality perovskite thin films with a fewer number of traps at surfaces and grain boundaries is highly desired. In this work, sulfur-doped graphene quantum dots (S-GQDs) were synthesized and incorporated in the CH3NH3PbBr3 perovskite precursor to prepare S-GQDs incorporated perovskite thin films. The as-prepared thin films were systematically characterized using X-ray diffractometer, field emission scanning electron microscope, UV–Vis and fluorescence spectrophotometer to investigate the effect of different amounts of S-GQDs on their morphology, optical absorbance and electron transfer properties. The experimental findings revealed that multiple surface functional groups, quantum confinement and desirable electronic conductivity in S-GQDs help passivate the perovskite surface by reducing the surface and grain boundary traps. Interestingly, the incorporation of S-GQDs increased the light absorption of CH3NH3PbBr3 along with faster electron transfer across their interfaces. Hence, this strategy of S-GQDs incorporation presents a versatile and novel way to prepare highly efficient perovskite thin films for developing next-generation solar cells, light emitting diodes and other optoelectronic devices. © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
Citation: Journal of Materials Science: Materials in Electronics, 32(13): 17406-17417
URI: https://doi.org/10.1007/s10854-021-06272-z
http://repository.iitr.ac.in/handle/123456789/24613
Issue Date: 2021
Publisher: Springer
Keywords: Electron transitions
Electron transport properties
Grain boundaries
Graphene
Graphene quantum dots
Hybrid materials
Light absorption
Morphology
Nanocrystals
Optoelectronic devices
Perovskite
Perovskite solar cells
Quantum chemistry
Scanning electron microscopy
Semiconductor quantum dots
Sulfur
Thin film circuits
Thin film solar cells
Thin films
Electronic conductivity
Field emission scanning electron microscopes
Fluorescence spectrophotometer
Optical absorbance
Other opto-electronic devices
Perovskite thin films
Photogenerated electrons
X ray diffractometers
Film preparation
ISSN: 9574522
Author Scopus IDs: 57203985194
57211634045
57262098100
7007044535
36610769900
56595314900
Author Affiliations: Kadian, S., Department of Polymer and Process Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India, Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada
Tailor, N.K., Department of Physics, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India
Chaulagain, N., Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada
Shankar, K., Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada
Satapathi, S., Department of Physics, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India
Manik, G., Department of Polymer and Process Engineering, Indian Institute of Technology Roorkee, Roorkee, Uttarakhand 247667, India
Funding Details: First and second authors would like to thank Science and Engineering Research Board (SERB), Department of Science and Technology, Government of India for facilitating with overseas visiting doctoral fellowship (OVDF) and UGC, Government of India for providing the doctoral scholarship, respectively. SS like to acknowledge MeiTy Research Grant DIC-1377-PHY. Authors sincerely acknowledge the Head, Department of Polymer and Process Engineering, Head, Department of Physics and Director, IIT Roorkee for providing the required infrastructure to complete this study. Department of Science and Technology, Ministry of Science and Technology, India, डीएसटी; University Grants Committee, UGC: DIC-1377-PHY; Science and Engineering Research Board, SERB
Corresponding Author: Manik, G.; Department of Polymer and Process Engineering, India; email: gaurav.manik@pe.iitr.ac.in Satapathi, S.; Department of Physics, India; email: soumitra.satapathi@ph.iitr.ac.in
Appears in Collections:Journal Publications [PE]
Journal Publications [PH]

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