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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24544
Title: White light modulated forming-free multilevel resistive switching in ZnO:Cu films
Authors: Saini M.
Kumar M.
Mandal R.
Mitra, Anirban
Som T.
Published in: Applied Surface Science
Abstract: Optical wavelength controlled forming-free, multilevel resistive switching (RS) is investigated in pulsed laser deposited visible light active 2 wt% Cu-doped ZnO (CZO) thin films. The illumination of wavelength-specific visible light in conjunction with applied voltage modulates the bipolar switching behaviour. Here the control of current compliance is the key to enable the memory device work reversibly at different operating voltage (<10 V) windows. The “set”/“reset” voltages for RS obtained for different wavelengths (in the range of 300–700 nm) appear in between the “set”/“reset” voltages obtained under dark and white light illumination. Light wavelength adds up an extra control parameter in conventional memristor devices for the encryption/decryption of specific information offering better cybersecurity. The RS mechanism is suggested to be filamentary where the formation and the rupturing of conducting filament occur by the migration of defects (e.g. O vacancies and interstitial Zn atoms) under externally applied electric field. This study provides a new insight towards designing visible light-controlled electrically-driven memristive devices, useful for low power operation, for neuromorphic computing. © 2021 Elsevier B.V.
Citation: Applied Surface Science, 563
URI: https://doi.org/10.1016/j.apsusc.2021.150271
http://repository.iitr.ac.in/handle/123456789/24544
Issue Date: 2021
Publisher: Elsevier B.V.
Keywords: Cu-doped ZnO
Current compliance
I-V characteristics
Resistive switching
Visible light
ISSN: 1694332
Author Scopus IDs: 57198050929
57222494670
57224354146
57209787039
7003595645
Author Affiliations: Saini, M., SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, Odisha, India, Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400 094, India
Kumar, M., Department of Materials Science and Engineering, Ajou University, Suwon, 16499, South Korea
Mandal, R., SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, Odisha, India, Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400 094, India
Mitra, A., Department of Physics, Indian Institute of Technology, Roorkee 247 667, Uttarakhand, India
Som, T., SUNAG Laboratory, Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, Odisha, India, Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400 094, India
Funding Details: The authors would like to thank Sanjeev Kumar Srivastava, IIT Kharagpur for help in XPS measurements.
Corresponding Author: Som, T.; SUNAG Laboratory, Sachivalaya Marg, India; email: tsom@iopb.res.in
Appears in Collections:Journal Publications [PH]

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