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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24493
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dc.contributor.authorKhanonkin I.-
dc.contributor.authorLorke M.-
dc.contributor.authorMichael S.-
dc.contributor.authorMishra, Akhilesh Kumar-
dc.contributor.authorReithmaier J.P.-
dc.contributor.authorJahnke F.-
dc.contributor.authorEisenstein G.-
dc.date.accessioned2022-03-22T08:28:48Z-
dc.date.available2022-03-22T08:28:48Z-
dc.date.issued2018-
dc.identifier.citationConference Digest - IEEE International Semiconductor Laser Conference (2018), 2018-September: 143-144-
dc.identifier.isbn9.78154E+12-
dc.identifier.issn8999406-
dc.identifier.urihttps://doi.org/10.1109/ISLC.2018.8516207-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/24493-
dc.description.abstractCarrier dynamics following a short pulse perturbation in a tunneling-injection quantum dot (QD) gain medium are analyzed. A hybrid state comprising the injection-well and QD first excited state dominate the dynamics with a time constant of 1ps. The role of the perturbation wavelength is discussed. © 2018 IEEE.-
dc.language.isoen_US-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.relation.ispartofConference Digest - IEEE International Semiconductor Laser Conference-
dc.relation.ispartof26th International Semiconductor Laser Conference, ISLC 2018-
dc.subjectDynamics-
dc.subjectExcited states-
dc.subjectInjection (oil wells)-
dc.subjectNanocrystals-
dc.subjectOptical waveguides-
dc.subjectSemiconductor optical amplifiers-
dc.subjectCarrier dynamics-
dc.subjectFirst excited state-
dc.subjectHybrid state-
dc.subjectInjection wells-
dc.subjectPerturbation wavelength-
dc.subjectQuantum dot semiconductor optical amplifier-
dc.subjectTime constants-
dc.subjectTunneling injection-
dc.subjectSemiconductor quantum dots-
dc.titleCarrier Dynamics in a 1.55 μm Tunneling Injection Quantum Dot Semiconductor Optical Amplifier-
dc.typeConference Paper-
dc.scopusid57193757612-
dc.scopusid10639307400-
dc.scopusid15056394800-
dc.scopusid15124163500-
dc.scopusid7004689148-
dc.scopusid7006449125-
dc.scopusid7005889949-
dc.affiliationKhanonkin, I., Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa, 32000, Israel-
dc.affiliationLorke, M., Institute for Theoretical Physics, University of Bremen, Bremen, 28334, Germany-
dc.affiliationMichael, S., Institute for Theoretical Physics, University of Bremen, Bremen, 28334, Germany-
dc.affiliationMishra, A.K., Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa, 32000, Israel, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore-
dc.affiliationReithmaier, J.P., Institute of Nanostructure Technologies and Analytics, Technische Physik, Kassel University, Kassel, 34132, Germany-
dc.affiliationJahnke, F., Institute for Theoretical Physics, University of Bremen, Bremen, 28334, Germany-
dc.affiliationEisenstein, G., Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa, 32000, Israel-
dc.identifier.conferencedetails26th International Semiconductor Laser Conference, ISLC 2018, 16 - 19, September, 2018-
Appears in Collections:Conference Publications [PH]

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