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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24424
Title: Coherent control in quantum dot gain media using shaped pulses: A numerical study
Authors: Mishra, Akhilesh Kumar
Karni O.
Eisenstein G.
Published in: Optics Express
Abstract: We present a numerical study of coherent control in a room temperature InAs/InP quantum dot (QD) semiconductor optical amplifier (SOA) using shaped ultra-short pulses. Both the gain and absorption regimes were analyzed for pulses with central wavelengths lying on either side of the inhomogeneously broadened gain spectrum. The numerical experiments predict that in the gain regime the coherent interactions between a QD SOA and a pulse can be controlled by incorporating a quadratic spectral phase (QSP) in the pulse profile. The sequential interaction with the gain medium of different spectral components of the pulse results in either suppression or enhancement of the coherent signatures on the pulse profile depending upon their proximity to the gain spectrum peak. In the absorption regime, positive QSP induces a negative chirp that adds up to that of a two photon absorption induced Kerr-like effect resulting in pulse compression while negative QSP enhances dispersive broadening of the pulse. ©2015 Optical Society of America.
Citation: Optics Express, 23(23): 29940-29953
URI: https://doi.org/10.1364/OE.23.029940
http://repository.iitr.ac.in/handle/123456789/24424
Issue Date: 2015
Publisher: OSA - The Optical Society
Keywords: Absorption spectroscopy
Light amplifiers
Nanocrystals
Semiconductor optical amplifiers
Two photon processes
Ultrashort pulses
Central wavelength
Coherent control
Coherent interaction
InAs/InP quantum dots
Numerical experiments
Sequential interactions
Spectral components
Two photon absorption
Semiconductor quantum dots
ISSN: 10944087
Author Scopus IDs: 15124163500
22035212000
7005889949
Author Affiliations: Mishra, A.K., Electrical Engineering Dept. and Russel Berrie Nanotechnology Institute, Technion, Haifa, 32000, Israel
Karni, O., Electrical Engineering Dept. and Russel Berrie Nanotechnology Institute, Technion, Haifa, 32000, Israel
Eisenstein, G., Electrical Engineering Dept. and Russel Berrie Nanotechnology Institute, Technion, Haifa, 32000, Israel
Appears in Collections:Journal Publications [PH]

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