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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24417
Title: Ultra-fast charge carrier dynamics across the spectrum of an optical gain media based on InAs/AlGaInAs/InP quantum dots
Authors: Khanonkin I.
Mishra, Akhilesh Kumar
Karni O.
Mikhelashvili V.
Banyoudeh S.
Schnabel F.
Sichkovskyi V.
Reithmaier J.P.
Eisenstein G.
Published in: AIP Advances
Abstract: The charge carrier dynamics of improved InP-based InAs/AlGaInAs quantum dot (QD) semiconductor optical amplifiers are examined employing the multi-wavelength ultrafast pump-probe measurement technique. The transient transmission response of the continuous wave probe shows interesting dynamical processes during the initial 2-3 ps after the pump pulse, when carriers originating from two photon absorption contribute the least to the recovery. The effects of optical excitations and electrical bias levels on the recovery dynamics of the gain in energetically different QDs are quantified and discussed. The experimental observations are validated qualitatively using a comprehensive finite-difference time-domain model by recording the time evolution of the charge carriers in the QDs ensemble following the pulse. © 2017 Author(s).
Citation: AIP Advances, 7(3)
URI: https://doi.org/10.1063/1.4979556
http://repository.iitr.ac.in/handle/123456789/24417
Issue Date: 2017
Publisher: American Institute of Physics Inc.
Keywords: Charge carriers
Dynamics
Finite difference time domain method
Light amplifiers
Nanocrystals
Narrow band gap semiconductors
Optical pumping
Optical waveguides
Probes
Semiconductor optical amplifiers
Two photon processes
Charge carrier dynamics
Dynamical process
Electrical bias
Finite-difference time-domain modeling
Multi-wavelengths
Pump probe measurement
Transmission response
Two photon absorption
Semiconductor quantum dots
ISSN: 21583226
Author Scopus IDs: 57193757612
15124163500
22035212000
55978787100
55991452700
7003679780
14038076300
7004689148
7005889949
Author Affiliations: Khanonkin, I., Russell Berrie Nanotechnology Institute, Technion, Haifa, 32000, Israel
Mishra, A.K., Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa, 32000, Israel
Karni, O., E. L. Ginzton Laboratory, Department of Applied Physics, Stanford University, Stanford, CA 94305, United States
Mikhelashvili, V., Russell Berrie Nanotechnology Institute, Technion, Haifa, 32000, Israel, Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa, 32000, Israel
Banyoudeh, S., Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, University of Kassel, Kassel, 34132, Germany
Schnabel, F., Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, University of Kassel, Kassel, 34132, Germany
Sichkovskyi, V., Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, University of Kassel, Kassel, 34132, Germany
Reithmaier, J.P., Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, University of Kassel, Kassel, 34132, Germany
Eisenstein, G., Russell Berrie Nanotechnology Institute, Technion, Haifa, 32000, Israel, Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion, Haifa, 32000, Israel
Funding Details: This work was partially supported by the Israel Science Foundation and the European project SEQUOIA. I. K. acknowledges the fellowship from Russell Berrie Nanotechnology Institute at Technion. A. K. M. acknowledges the support in part at Technion by Israel Council for Higher Education. O. K. thanks the Adams Fellowship of the Israel Academy of Sciences and Humanities for financial support during this research. Israel Academy of Sciences and Humanities; Israel Science Foundation, ISF
Appears in Collections:Journal Publications [PH]

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