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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24409
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dc.contributor.authorKhanonkin I.-
dc.contributor.authorEisenstein G.-
dc.contributor.authorLorke M.-
dc.contributor.authorMichael S.-
dc.contributor.authorJahnke F.-
dc.contributor.authorMishra, Akhilesh Kumar-
dc.contributor.authorReithmaier J.P.-
dc.date.accessioned2022-03-22T08:28:28Z-
dc.date.available2022-03-22T08:28:28Z-
dc.date.issued2018-
dc.identifier.citationPhysical Review B, 98(12)-
dc.identifier.issn24699950-
dc.identifier.urihttps://doi.org/10.1103/PhysRevB.98.125307-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/24409-
dc.description.abstractThe process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is not fully understood microscopically and therefore it is difficult to optimize those laser structures. We present here a numerical study of the broadband carrier dynamics in a tunneling injection quantum dot gain medium in the form of an optical amplifier operating at 1.55μm. Charge carrier tunneling occurs in a hybrid state that joins the quantum dot first excited state and the confined quantum well-injection well states. The hybrid state, which is placed energetically roughly one longitudinal optic phonon above the ground state and has a spectral extent of about 5meV, dominates the carrier injection to the ground state. We calculate the dynamical response of the inversion across the entire gain spectrum following a short pulse perturbation at various wavelengths and for two bias currents. At a high bias of 200mA, the entire spectrum exhibits gain; at 30mA, the system exhibits a mixed gain-absorption spectrum. The carrier dynamics in the injection well is calculated simultaneously. We discuss the role of the pulse excitation wavelengths relative to the gain spectrum peak and demonstrate that the injection well responds to all perturbation wavelengths, even those which are far from the region where the tunneling injection process dominates. © 2018 American Physical Society.-
dc.language.isoen_US-
dc.publisherAmerican Physical Society-
dc.relation.ispartofPhysical Review B-
dc.titleCarrier dynamics in a tunneling injection quantum dot semiconductor optical amplifier-
dc.typeArticle-
dc.scopusid57193757612-
dc.scopusid7005889949-
dc.scopusid10639307400-
dc.scopusid15056394800-
dc.scopusid7006449125-
dc.scopusid15124163500-
dc.scopusid7004689148-
dc.affiliationKhanonkin, I., Andrew and Erna Viterbi Department of Electrical Engineering, Technion, Haifa, 32000, Israel-
dc.affiliationEisenstein, G., Andrew and Erna Viterbi Department of Electrical Engineering, Technion, Haifa, 32000, Israel-
dc.affiliationLorke, M., Institute for Theoretical Physics, University of Bremen, Bremen, 28334, Germany-
dc.affiliationMichael, S., Institute for Theoretical Physics, University of Bremen, Bremen, 28334, Germany-
dc.affiliationJahnke, F., Institute for Theoretical Physics, University of Bremen, Bremen, 28334, Germany-
dc.affiliationMishra, A.K., School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore-
dc.affiliationReithmaier, J.P., Institute of Nanostructure Technologies and Analytics, Technische Physik, CINSaT, University of Kassel, Kassel, 34132, Germany-
dc.description.fundingThis work is partially supported by the Israel Science Foundation, Grant No. 1504/16. M.L., S.M., and F.J. acknowledge funding from the DFG and a grant for CPU time from the HLRN (Hannover/Berlin). California Department of Fish and Game, DFG; Central Policy Unit, CPU; Deutsche Forschungsgemeinschaft, DFG; Israel Science Foundation, ISF: 1504/16-
Appears in Collections:Journal Publications [PH]

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