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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/24408
Title: Impact of exponential saturable nonlinearity on modulation instability in silicon-on-Insulator nano-waveguides
Authors: Chaturvedi D.
Kumar A.
Mishra, Akhilesh Kumar
Published in: Optik
Abstract: We present a theoretical study of modulation instability (MI) in silicon-on-insulator (SOI) nano-waveguides in the presence of exponential saturable nonlinearity (SNL). The study incorporates two-photon absorption and free-carrier effects in the normal dispersion regimes at telecommunication wavelength. Also, we have shown the impact of SNL on the power dependence of MI gain spectra, and carrier density. Further, the effects of carrier lifetime and fourth order dispersion on MI gain spectra have been discussed in the presence of SNL. © 2019 Elsevier GmbH
Citation: Optik, 185: 215-222
URI: https://doi.org/10.1016/j.ijleo.2019.03.088
http://repository.iitr.ac.in/handle/123456789/24408
Issue Date: 2019
Publisher: Elsevier GmbH
Keywords: Exponential saturable nonlinearity
Free-carrier induced dispersion
Free-carrier-induced absorption
Modulation instability
Silicon-on-insulator nano-waveguides
Two-photon absorption
ISSN: 304026
Author Scopus IDs: 56625680200
55619311772
15124163500
Author Affiliations: Chaturvedi, D., Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India
Kumar, A., Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India
Mishra, A.K., Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Corresponding Author: Chaturvedi, D.; Department of Physics, Hauz Khas, India; email: waytodeepa@gmail.com
Appears in Collections:Journal Publications [PH]

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