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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/22493
Title: Design of grating based narrow band reflector on SOI waveguide
Authors: Sharma T.
Rana V.
Wang J.
Cheng Z.
Chen Y.
Geng Y.
Hong X.
Li X.
Yu K.
Kumar Kaushik, Brajesh
Published in: Optik
Abstract: A grating-based narrowband wavelength selective reflector on silicon on insulator waveguide is proposed here. The 500 nm thick silicon waveguide is used in the reflector design. The design consists of dual-etch layers for different grating sets separated by the center cavity. The duty-cycle, grating-period, and side etching depth are optimized for achieving high reflection and narrow bandwidth. The proposed reflector shows a reflection of 96 % with a full-width half-maximum bandwidth of 1.5 nm at 1550 nm wavelengths. © 2020 Elsevier GmbH
Citation: Optik, 227
URI: https://doi.org/10.1016/j.ijleo.2020.165995
http://repository.iitr.ac.in/handle/123456789/22493
Issue Date: 2021
Publisher: Elsevier GmbH
Keywords: Filters
Gratings
Silicon
Waveguides
ISSN: 304026
Author Scopus IDs: 57225310555
50861870400
56591074900
54384799300
56023495200
15059864500
26653555800
56039737600
7403385948
57021830600
Author Affiliations: Sharma, T., College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China, Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttrakhand 247667, India
Rana, V., Center for Applied Research in Electronics (C.A.R.E.), Indian Institute of Technology Delhi110016, India
Wang, J., College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China
Cheng, Z., School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin, 300072, China, Key Laboratory of Optoelectronic Information Technology, Ministry of Education, Tianjin, 300072, China, Department of Chemistry, The University of Tokyo, Tokyo, 113-0033, Japan
Chen, Y., College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China
Geng, Y., College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China
Hong, X., College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China
Li, X., College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China
Yu, K., School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, South Korea
Kaushik, B.K., Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, Uttrakhand 247667, India
Funding Details: This work was in part by the National Natural Science Foundation of China ( 61805164 , 61775149 , and 61805175 ), the Shenzhen Science and Technology Project ( JCYJ20190808120801661 ), the Research Fund of Key Laboratory of Opto-electronic Information Technology, Ministry of Education(Tianjin University) ( 2020KFKT008 ), and the Teaching Reform Research Project of Shenzhen University ( JG2019068 ). JG2019068; National Natural Science Foundation of China, NSFC: 61775149, 61805164, 61805175; Ministry of Education of the People's Republic of China, MOE; Tianjin University, TJU: 2020KFKT008; Science and Technology Planning Project of Shenzhen Municipality: JCYJ20190808120801661
Corresponding Author: Wang, J.; College of Physics and Optoelectronic Engineering, China; email: jqwang@szu.edu.cn
Appears in Collections:Journal Publications [ECE]

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