http://repository.iitr.ac.in/handle/123456789/22466| Title: | High n -type conductivity and carrier concentration in Si-implanted homoepitaxial AlN |
| Authors: | Breckenridge M.H. Bagheri P. Guo Q. Sarkar, Biplab Khachariya D. Pavlidis S. Tweedie J. Kirste R. Mita S. Reddy P. Collazo R. Sitar Z. |
| Published in: | Applied Physics Letters |
| Abstract: | We demonstrate Si-implanted AlN with high conductivity (>1 ω-1 cm-1) and high carrier concentration (5 × 1018 cm-3). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (<103 cm-2), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of VAl-nSiAl complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ∼70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN. © 2021 Author(s). |
| Citation: | Applied Physics Letters, 118(11) |
| URI: | https://doi.org/10.1063/5.0042857 http://repository.iitr.ac.in/handle/123456789/22466 |
| Issue Date: | 2021 |
| Publisher: | American Institute of Physics Inc. |
| Keywords: | Aluminum nitride Annealing III-V semiconductors Silicon Temperature Dopant activation High conductivity Low temperatures N-type conductivity Quasi-Fermi level Self compensation Technological breakthroughs Threading dislocation densities Carrier concentration |
| ISSN: | 36951 |
| Author Scopus IDs: | 57200504504 57201656164 57200500288 57205868869 56565498100 37102361800 23487136400 24450568300 8535369100 56985105000 6701729383 7004338257 |
| Author Affiliations: | Breckenridge, M.H., Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27606, United States Bagheri, P., Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27606, United States Guo, Q., Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27606, United States Sarkar, B., Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27606, United States Khachariya, D., Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27606, United States Pavlidis, S., Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27606, United States Tweedie, J., Adroit Materials, Cary, NC 27518, United States Kirste, R., Adroit Materials, Cary, NC 27518, United States Mita, S., Adroit Materials, Cary, NC 27518, United States Reddy, P., Adroit Materials, Cary, NC 27518, United States Collazo, R., Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27606, United States Sitar, Z., Department of Material Science and Engineering, North Carolina State University, Raleigh, NC 27606, United States, Adroit Materials, Cary, NC 27518, United States |
| Funding Details: | The authors acknowledge funding in part from AFOSR (Nos. FA9550-17-1-0225 and FA9550-19-1-0114), NSF (Nos. ECCS-1508854, ECCS-1610992, DMR-1508191, and ECCS-1653383), ARO (Nos. W911NF-15-2-0068 and W911NF-16-C-0101), and DOE (No. DE-SC0011883). National Science Foundation, NSF: DMR-1508191, ECCS-1508854, ECCS-1610992, ECCS-1653383; U.S. Department of Energy, USDOE: DE-SC0011883; Air Force Office of Scientific Research, AFOSR: FA9550-17-1-0225, FA9550-19-1-0114; Army Research Office, ARO: W911NF-15-2-0068, W911NF-16-C-0101 |
| Corresponding Author: | Breckenridge, M.H.; Department of Material Science and Engineering, United States; email: mhbrecke@ncsu.edu |
| Appears in Collections: | Journal Publications [ECE] |
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