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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/22465
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dc.contributor.authorJadhav A.-
dc.contributor.authorDai Y.-
dc.contributor.authorUpadhyay P.-
dc.contributor.authorGuo W.-
dc.contributor.authorSarkar, Biplab-
dc.date.accessioned2022-03-21T09:47:23Z-
dc.date.available2022-03-21T09:47:23Z-
dc.date.issued2021-
dc.identifier.citationJournal of Electronic Materials, 50(6): 3731-3738-
dc.identifier.issn3615235-
dc.identifier.urihttps://doi.org/10.1007/s11664-021-08890-z-
dc.identifier.urihttp://repository.iitr.ac.in/handle/123456789/22465-
dc.description.abstractBarrier height at the interface between metal and polar AlxGa1−xN (0 ≤ x ≤ 1) epitaxial films was investigated using X-ray photoelectron spectroscopy and interface induced gap states (IFIGS) model. The opposite nature of polarization charge yields a significantly lower barrier height in N-polar AlxGa1−xN surface compared to the III-polar counterpart. Accordingly, IFIGS model indicate that III-polar AlxGa1−xN films are advantageous for Schottky contact formation for x < 0.3, whereas N-polar films offer a significantly lower knee voltage and ON-state resistance than the III-polar counterpart for x ≥ 0.3. Furthermore, N-polar AlxGa1−xN films are expected to offer a lower ohmic contact resistance than the III-polar counterpart for all values of x. The analysis performed in this work highlight the importance of N-polar Al-rich AlxGa1−xN epitaxial films for extending the figures of merit in future ultra-wide band gap semiconductor Schottky diodes. © 2021, The Minerals, Metals & Materials Society.-
dc.language.isoen_US-
dc.publisherSpringer-
dc.relation.ispartofJournal of Electronic Materials-
dc.subjectAlGaN-
dc.subjectcontact resistance-
dc.subjectIFIGS model-
dc.subjectSchottky diode-
dc.subjectΒ-Ga2O3-
dc.titleRole of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes-
dc.typeArticle-
dc.scopusid57223099588-
dc.scopusid57212610209-
dc.scopusid57223092431-
dc.scopusid55531902400-
dc.scopusid57205868869-
dc.affiliationJadhav, A., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India-
dc.affiliationDai, Y., Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China-
dc.affiliationUpadhyay, P., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India-
dc.affiliationGuo, W., Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China-
dc.affiliationSarkar, B., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India-
dc.description.fundingGrowth, XPS and AFM characterization of the polar AlGaN films were carried out at Ningbo Institute of Materials Technology and Engineering (NIMTE), China, whereas the data analysis and MATLAB fitting was carried out in Indian Institute of Technology (IIT) Roorkee, India. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, NIMTE, CAS-
dc.description.correspondingauthorSarkar, B.; Department of Electronics and Communication Engineering, India; email: bsarkar@ece.iitr.ac.in-
Appears in Collections:Journal Publications [ECE]

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