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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/22465
Title: Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes
Authors: Jadhav A.
Dai Y.
Upadhyay P.
Guo W.
Sarkar, Biplab
Published in: Journal of Electronic Materials
Abstract: Barrier height at the interface between metal and polar AlxGa1−xN (0 ≤ x ≤ 1) epitaxial films was investigated using X-ray photoelectron spectroscopy and interface induced gap states (IFIGS) model. The opposite nature of polarization charge yields a significantly lower barrier height in N-polar AlxGa1−xN surface compared to the III-polar counterpart. Accordingly, IFIGS model indicate that III-polar AlxGa1−xN films are advantageous for Schottky contact formation for x < 0.3, whereas N-polar films offer a significantly lower knee voltage and ON-state resistance than the III-polar counterpart for x ≥ 0.3. Furthermore, N-polar AlxGa1−xN films are expected to offer a lower ohmic contact resistance than the III-polar counterpart for all values of x. The analysis performed in this work highlight the importance of N-polar Al-rich AlxGa1−xN epitaxial films for extending the figures of merit in future ultra-wide band gap semiconductor Schottky diodes. © 2021, The Minerals, Metals & Materials Society.
Citation: Journal of Electronic Materials, 50(6): 3731-3738
URI: https://doi.org/10.1007/s11664-021-08890-z
http://repository.iitr.ac.in/handle/123456789/22465
Issue Date: 2021
Publisher: Springer
Keywords: AlGaN
contact resistance
IFIGS model
Schottky diode
Β-Ga2O3
ISSN: 3615235
Author Scopus IDs: 57223099588
57212610209
57223092431
55531902400
57205868869
Author Affiliations: Jadhav, A., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Dai, Y., Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
Upadhyay, P., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Guo, W., Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
Sarkar, B., Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Uttarakhand, 247667, India
Funding Details: Growth, XPS and AFM characterization of the polar AlGaN films were carried out at Ningbo Institute of Materials Technology and Engineering (NIMTE), China, whereas the data analysis and MATLAB fitting was carried out in Indian Institute of Technology (IIT) Roorkee, India. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, NIMTE, CAS
Corresponding Author: Sarkar, B.; Department of Electronics and Communication Engineering, India; email: bsarkar@ece.iitr.ac.in
Appears in Collections:Journal Publications [ECE]

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