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Please use this identifier to cite or link to this item: http://repository.iitr.ac.in/handle/123456789/22421
Title: Analysis and modeling of quantum capacitance in III-V transistors
Authors: Dasgupta, Avirup
Yadav C.
Rastogi P.
Agarwal A.
Chauhan Y.S.
Published in: 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings
2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014
Abstract: We present a physical compact model for the calculation of the capacitance including a physics based model for the calculation of the charge centroid for III-V FETs. We have used Fermi-Dirac statistics considering two energy subbands obtained from analytical Schrödinger-Poisson solution of charge. The model is validated with data from numerical device simulations and shows excellent match. © 2014 IEEE.
Citation: 2014 IEEE 2nd International Conference on Emerging Electronics: Materials to Devices, ICEE 2014 - Conference Proceedings (2014)
URI: https://doi.org/10.1109/ICEmElec.2014.7151139
http://repository.iitr.ac.in/handle/123456789/22421
Issue Date: 2014
Publisher: Institute of Electrical and Electronics Engineers Inc.
Keywords: Charge cen-troid
III-V FETs
Quantum capacitance
ISBN: 9.78147E+12
Author Scopus IDs: 56389226300
55767883400
56463671700
56525900500
14029622100
Author Affiliations: DasGupta, A., Nanolab, Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India
Yadav, C., Nanolab, Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India
Rastogi, P., Nanolab, Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India
Agarwal, A., Department of Physics, Indian Institute of Technology, Kanpur, India
Chauhan, Y.S., Nanolab, Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India
Appears in Collections:Conference Publications [ECE]

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